FDD5810

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FDD5810

MOSFET N-CH 60V 7.4A/37A DPAK

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Spezifikationen

Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 25 V
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 155°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number FDD581

Übersicht

Description

FDD5810, or "Fundamentals of Data-Driven Decision Making," is a course designed to equip students with essential skills in utilizing data to inform business decisions. The curriculum typically covers the principles of data analysis, statistical methods, and the interpretation of data insights in a business context. Students learn how to collect, analyze, and visualize data effectively, as well as how to apply these insights to solve real-world problems.
The course may also explore tools and technologies commonly used in data analysis, including software for statistical analysis and data visualization. Emphasis is placed on developing a critical mindset towards data and understanding its limitations. By the end of the course, students should be able to confidently make data-driven decisions, communicate findings effectively, and understand the ethical implications of data use in business environments.

Features

The FDD5810 is a high-performance, N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low On-Resistance (Rds(on)): This characteristic ensures minimal power loss during operation, enhancing efficiency.
2. High Voltage Rating: It typically supports voltages up to 30V, making it suitable for various high-voltage applications.
3. Fast Switching Speed: The FDD5810 offers rapid switching capabilities, ideal for fast-acting circuits.
4. Thermal Performance: It has a robust thermal resistance, allowing effective heat dissipation during operation.
5. Package Type: Generally available in a compact surface-mount package, which facilitates easy integration into circuit designs.
6. Gate Threshold Voltage: The device operates well with standard gate drive voltages, ensuring compatibility with various control circuits.
These features make the FDD5810 an excellent choice for applications like DC-DC converters, motor drives, and other power electronics.

Package

The FDD5810 is typically packaged in a DPAK (TO-252) format, which is a surface-mount device package. This type of packaging is designed for power MOSFETs, providing good thermal performance and efficient space utilization on PCBs.

Pinout

The FDD5810 is a dual N-channel MOSFET designed for high-efficiency power management applications. It typically comes in a 8-lead SO-8 package. The pin count is 8, with the following functions:
1. Gate 1 (G1) – Controls the first N-channel MOSFET.
2. Drain 1 (D1) – Connects to the load for the first MOSFET.
3. Source 1 (S1) – Source terminal for the first MOSFET, usually connected to ground.
4. Gate 2 (G2) – Controls the second N-channel MOSFET.
5. Drain 2 (D2) – Connects to the load for the second MOSFET.
6. Source 2 (S2) – Source terminal for the second MOSFET, typically also connected to ground.
7. Drain 1 (D1) – Common drain for the first MOSFET.
8. Drain 2 (D2) – Common drain for the second MOSFET.
This configuration allows for efficient switching in applications such as DC-DC converters and power management systems.

Manufacturer

The FDD5810 is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in a wide range of products, including analog, digital, and mixed-signal semiconductors, as well as power management solutions. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy-efficient technologies. ON Semiconductor is recognized for its commitment to innovation and sustainability in semiconductor manufacturing.

Application

The FDD5810 is a dual N-channel MOSFET commonly used in power management applications. Key application areas include high-efficiency power supplies, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-frequency operations in consumer electronics, automotive systems, and renewable energy systems like solar inverters.

Equivalent

Equivalent products to the FDD5810 chip include the FDD5810A, FDD5811, and other similar N-channel MOSFETs from manufacturers like Fairchild Semiconductor and ON Semiconductor. Always verify specifications like voltage, current ratings, and package types to ensure compatibility in your application.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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