FDD86252

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FDD86252

MOSFET N-CH 150V 5A/27A DPAK

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Spezifikationen

Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 985 pF @ 75 V
Power Dissipation (Max) 3.1W (Ta), 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number FDD862

Übersicht

Description

FDD86252 is a high-performance, monolithic power MOSFET designed for various applications including power management, motor control, and DC-DC converters. It typically features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion and management in electronic circuits.
FDD86252 is part of a broader family of MOSFETs that operate at high voltages and currents, and it is often utilized in applications where thermal performance and reliability are critical. The device's design allows for effective heat dissipation, contributing to overall system efficiency.
Manufacturers typically specify key parameters such as gate threshold voltage, maximum drain-source voltage, and continuous drain current ratings, which are crucial for engineers when selecting the appropriate MOSFET for their applications. The FDD86252 thus serves as a versatile component in modern electronic design, supporting advancements in energy efficiency and performance.

Features

The FDD86252 is a high-performance RF power amplifier designed for use in wireless communication applications, particularly in the frequency range of 1.8 GHz to 2.0 GHz. Key features include:
1. High Efficiency: Designed for optimal power efficiency, enhancing battery life in portable devices.
2. Compact Design: Integrated in a small package, facilitating easier integration into space-constrained applications.
3. Wide Dynamic Range: Suitable for various signal conditions, making it versatile for different communication standards.
4. Low Noise Figure: Ensures minimal signal degradation, improving overall system performance.
5. Integrated Protection: Built-in features to protect against over-voltage and over-temperature conditions.
6. High Gain: Provides sufficient amplification for weak signals, ensuring reliable transmission.
These features make the FDD86252 ideal for applications in mobile devices, base stations, and other RF communication systems.

Package

The FDD86252 is typically packaged in a TO-220 or DPAK (also known as TO-252) package type. These packages are designed for efficient heat dissipation and are commonly used for power MOSFETs in various applications.

Pinout

The FDD86252 is a dual N-channel MOSFET typically used for power management applications. It features a total of 8 pins.
The pin functions are as follows:
1. G1 - Gate of the first N-channel MOSFET
2. D1 - Drain of the first N-channel MOSFET
3. S1 - Source of the first N-channel MOSFET
4. G2 - Gate of the second N-channel MOSFET
5. D2 - Drain of the second N-channel MOSFET
6. S2 - Source of the second N-channel MOSFET
7. VDD - Supply Voltage
8. GND - Ground
These MOSFETs are designed for low on-resistance and high-speed switching, making them suitable for various applications like DC-DC converters and power management systems. Always refer to the specific datasheet for detailed operational characteristics and electrical specifications.

Manufacturer

The FDD86252 is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital components. The company serves various markets, including automotive, industrial, and consumer electronics. Established in 1999, ON Semiconductor has expanded through acquisitions and innovation, positioning itself as a key player in the semiconductor industry.

Application

The FDD86252 is a dual N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for use in various electronic devices, including consumer electronics, automotive systems, and industrial automation.

Equivalent

The FDD86252 is a dual N-channel MOSFET. Equivalent products include the FDD86352, FDD86350, and BSS123. Always check the specific parameters like voltage, current, and package type for compatibility in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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