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FDD86369
MOSFET N-CH 80V 90A DPAK
- Hersteller
- Fr. Teil #FDD86369
- Paket
- Datenblatt FDD86369 DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.9mOhm @ 80A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2530 pF @ 40 V |
| PowerDissipation(Max) | 150W (Tj) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-PAK (TO-252) |
Übersicht
Description
Key parameters to consider when evaluating the FDD86369 include its R_DS(on), gate threshold voltage, maximum drain-source voltage (V_DS), and total gate charge (Q_g). Understanding these specifications helps engineers select the appropriate MOSFET for their specific application needs, ensuring optimal performance and efficiency.
Features
1. Dual-Band LTE Support: Operates on both FDD and TDD bands, enhancing versatility for various network standards.
2. High Data Rates: Supports download speeds up to 150 Mbps and upload speeds up to 50 Mbps, ensuring efficient data transmission.
3. Low Power Consumption: Designed for energy efficiency, extending battery life in mobile devices.
4. Compact Form Factor: Small size facilitates integration into a wide range of devices, including smartphones and IoT applications.
5. Robust Security Features: Supports advanced encryption standards to safeguard user data and privacy.
6. Multi-Mode Capability: Compatible with multiple connectivity technologies, including 3G and 2G, for backward compatibility.
7. Ease of Integration: Simplified design allows for quicker development cycles in manufacturing.
These features make the FDD86369 suitable for a variety of applications in the mobile telecommunications sector.
Package
Pinout
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode - Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The specific pin configuration may vary depending on the exact package type, so it is crucial to refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics. The FDD86369 is known for its low on-resistance and fast switching speed, making it suitable for high-efficiency applications.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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