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FDG6301N
MOSFET 2N-CH 25V 0.22A SC88
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- Fr. Teil #FDG6301N
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Spezifikationen
| Part Status | Obsolete |
| Base Product Number | FDG6301 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 220mA |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88 (SC-70-6) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
The course likely covers theoretical frameworks, case studies, and hands-on projects that enhance critical thinking and problem-solving abilities. Students may engage in collaborative learning experiences, leveraging discussions and teamwork to deepen their understanding of the subject matter.
Key objectives often include developing analytical skills, understanding industry standards, and applying concepts to real-world scenarios. Prerequisites may include prior coursework or experience in related disciplines. Overall, FDG6301N serves as a vital stepping stone for those seeking to excel in their career paths or pursue further academic inquiries.
Features
1. Voltage Rating: Typically supports a high drain-source voltage (V_DS), making it suitable for power applications.
2. Current Capacity: Offers a substantial continuous drain current (I_D), enabling efficient operation in demanding conditions.
3. Low On-Resistance (R_DS(on)): This results in reduced power losses and improved efficiency during operation.
4. Fast Switching Speed: Ideal for high-frequency applications, enhancing overall performance in circuits.
5. Thermal Performance: Designed with good thermal characteristics, allowing for better heat dissipation and reliability.
6. Package Options: Available in various package types, which facilitate integration into different circuit designs.
Overall, the FDG6301N is recognized for its reliability, efficiency, and versatility in a wide range of electronic applications.
Package
Pinout
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - Source terminal for the first N-channel MOSFET.
4. Source2 (S2) - Source terminal for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate2 (G2) - Controls the second N-channel MOSFET.
7. Drain3 (D3) - Second drain terminal (shared with D2 for the second MOSFET).
8. Source3 (S3) - Common source terminal (shared with S2 for the second MOSFET).
The FDG6301N is commonly used in various applications such as power management, switching, and load driving due to its low on-resistance and fast switching capabilities.
Application
Equivalent
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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