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FDMC007N30D
MOSFET 2 N-CHANNEL 30V 46A 8MLP
- Hersteller
- Fr. Teil #FDMC007N30D
- Paket WDFN-8
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 46A |
| RdsOn(Max)@IdVgs | 11.6mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 34nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1110pF @ 15V, 2360pF @ 15V |
| Power-Max | 1.9W, 2.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerWDFN |
Übersicht
Description
The FDMC007N30D is housed in a compact package, making it suitable for space-constrained applications. Its high efficiency and thermal performance make it ideal for use in both consumer and industrial electronics. The MOSFET can be driven with low gate voltage, enhancing its compatibility with various control circuits.
Overall, the FDMC007N30D is a versatile and efficient choice for engineers designing electronic systems requiring reliable switching and high efficiency in compact designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current of up to 7A, ideal for switching and amplifying signals.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.007Ω, which minimizes power loss and improves efficiency during operation.
4. Fast Switching: The MOSFET supports fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: It features a high thermal conductivity, allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, which facilitates better thermal management and ease of mounting.
These attributes make the FDMC007N30D a versatile component for power supplies, DC-DC converters, and motor control applications.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; applying a voltage here turns the device on or off.
2. Drain (D): The terminal through which the current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters when the MOSFET is in the conducting state.
This MOSFET is designed for efficient switching applications, with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 7A. It is commonly used in power management and switching circuits.
Manufacturer
Application
Equivalent
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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