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FDMC86259P
MOSFET P-CH 150V 3.2A/13A PWR33
- Hersteller
- Fr. Teil #FDMC86259P
- Paket
- Datenblatt FDMC86259P DataSheet
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Spezifikationen
| Series | PowerTrench® |
| Part Status | Active |
| Base Product Number | FDMC86259 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2045 pF @ 75 V |
| Power Dissipation (Max) | 2.3W (Ta), 62W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Power33 |
| Package | 8-PowerWDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
The "FDMC" prefix indicates that it is part of a family of MOSFETs produced by Fairchild Semiconductor, which is now part of ON Semiconductor. The "86259P" designation provides specific details about its electrical characteristics, package type, and intended usage. Users can expect reliable performance in demanding environments, with thermal stability and safe operating conditions, essential for modern electronic designs.
For detailed specifications, including maximum voltage, current ratings, and thermal performance, it's advisable to refer to the manufacturer's datasheet.
Features
With a maximum drain-source voltage (VDS) rating that allows for robustness in high-voltage applications, it also offers a high continuous drain current (ID), ensuring that it can handle significant loads. The device is housed in a compact package, facilitating easy integration into space-constrained designs.
Additionally, the FDMC86259P has a fast switching speed, which is beneficial for applications requiring rapid response times. Overall, it is an ideal choice for designers looking for reliability and efficiency in power electronic systems.
Package
Pinout
The pin configuration is as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the drain of the first MOSFET.
3. Source 1 (S1): Connects to the source of the first MOSFET.
4. Source 2 (S2): Connects to the source of the second MOSFET.
5. Drain 2 (D2): Connects to the drain of the second MOSFET.
6. Gate 2 (G2): Controls the second N-channel MOSFET.
7. DRAIN 1 (D1): Drain of the first MOSFET.
8. DRAIN 2 (D2): Drain of the second MOSFET.
This device is commonly used in switching applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
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Zahlungen
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