FDMC86570L

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FDMC86570L

MOSFET N-CH 60V 18A/56A POWER33

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Spezifikationen

Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6705 pF @ 30 V
Power Dissipation (Max) 2.3W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Power33
Package / Case 8-PowerWDFN
Base Product Number FDMC86570

Übersicht

Description

FDMC86570L is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-performance applications, particularly in power management and switching. It features low on-resistance and fast switching speeds, making it suitable for use in various electronic circuits, including power supplies and motor drivers. The device typically operates with low gate drive requirements, enhancing efficiency in applications such as DC-DC converters and battery management systems.
The "L" designation often indicates a specific package type or a feature set that may include aspects like lower thermal resistance or enhanced reliability. Its compact footprint allows for integration into space-constrained designs.
Overall, FDMC86570L is favored in applications requiring efficient power handling and thermal management, contributing to improved performance in consumer electronics, automotive systems, and industrial equipment. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Features

The FDMC86570L is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of around 30V.
2. Current Rating: It can handle continuous drain current (I_D) of approximately 70A, making it suitable for high-power applications.
3. On-Resistance (R_DS(on)): Low on-resistance values, often around 10 mΩ, enhance efficiency by reducing power loss.
4. Gate Threshold Voltage (V_GS(th)): Generally between 1V to 2.5V, allowing for compatibility with low-voltage drive circuits.
5. Package Type: Usually available in DPAK or similar packages, facilitating easy integration into designs.
6. Thermal Performance: Good thermal characteristics enable reliable operation in demanding environments.
These features make the FDMC86570L an excellent choice for applications in power supplies, motor drives, and automotive systems.

Package

The FDMC86570L is packaged in a DPAK (also known as TO-252) format, which is a surface-mount package designed for power applications. It offers good thermal performance and is suitable for various electronic applications.

Pinout

The FDMC86570L is a dual N-channel MOSFET in a 8-lead thermally enhanced package. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the drain of the first N-channel MOSFET.
3. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the drain of the second N-channel MOSFET.
6. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
7. Drain 3 (D3) - Shared drain connection, if applicable in the circuit.
8. Source 3 (S3) - Shared source connection, if applicable in the circuit.
The device is commonly used in power management applications such as DC-DC converters and load switches.

Manufacturer

The FDMC86570L is manufactured by Fairchild Semiconductor, a company that specializes in semiconductor solutions for various applications. Fairchild, which is now part of ON Semiconductor, focuses on developing and producing a wide range of products, including power management, analog, and digital components, serving industries such as automotive, industrial, and consumer electronics. The FDMC86570L itself is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power conversion applications.

Application

The FDMC86570L is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, battery management systems, and power supplies. Its features make it suitable for high-efficiency switching applications in consumer electronics, automotive systems, and industrial equipment. Additionally, it's utilized in load switching and power routing applications due to its low on-resistance and fast switching capabilities.

Equivalent

The FDMC86570L is a N-channel MOSFET designed for power management applications. Equivalent products include the AOZ1280, IRF3205, and FDS6910. When selecting an alternative, ensure that the voltage rating, current handling, RDS(on), and package type match your application's requirements. Always check the specific datasheet to confirm compatibility.

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