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FDMS039N08B
MOSFET N-CH 80V 19.4A/100A 8PQFN
- Hersteller
- Fr. Teil #FDMS039N08B
- Paket PowerTDFN-8
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- Auf Lager4746
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 19.4A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.9mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7600 pF @ 40 V |
| PowerDissipation(Max) | 2.5W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Übersicht
Description
The device is encapsulated in a TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for high-frequency applications. Additionally, the FDMS039N08B is characterized by low gate charge, which allows for reduced switching losses and improved efficiency in circuit designs. Overall, this MOSFET is widely used in automotive, industrial, and consumer electronics due to its reliability and performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 39A at a specified temperature, allowing for robust performance in high-load scenarios.
3. On-Resistance: A low R_DS(on) of approximately 0.028 ohms at V_GS of 10V enhances efficiency by reducing power losses during operation.
4. Thermal Performance: It comes in a TO-220 package, providing good heat dissipation characteristics for better thermal management.
5. Fast Switching Speed: This MOSFET supports high-speed switching, beneficial for applications like converters and motor drives.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, allowing for easy driving with standard logic levels.
Overall, the FDMS039N08B excels in performance, making it ideal for power management, automotive, and industrial applications.
Package
Pinout
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
7. Common Source Connection (S1 & S2) - Typically connected for shared ground reference.
8. Common Drain Connection (D1 & D2) - Can be connected for parallel operation.
The FDMS039N08B is designed for high-efficiency switching applications and is commonly used in power management solutions. It features low R_DS(on), which minimizes conduction losses.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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