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FDMS86252L
FDMS86252 - N-CHANNEL SHIELDED G
- Hersteller
- Fr. Teil #FDMS86252L
- Paket
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Spezifikationen
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 4.4A (Ta), 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 56mOhm @ 4.4A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1335 pF @ 75 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Übersicht
Description
The MOSFET has a robust gate threshold voltage (V_GS(th)), allowing for reliable turn-on at lower voltages. It also supports high-frequency operation due to its fast switching capabilities, which helps minimize energy losses during transitions.
Given its thermal characteristics, the FDMS86252L can handle substantial power dissipation, making it suitable for compact designs where heat management is critical.
Overall, this MOSFET is ideal for engineers seeking efficient and reliable components for various electronic and industrial applications.
Features
1. Voltage Rating: It typically supports a high drain-source voltage, suitable for various power applications.
2. Low R_DS(on): This feature ensures minimal conduction losses, enhancing efficiency in switching applications.
3. High Speed: Fast switching capabilities make it ideal for applications requiring rapid on-off control.
4. Thermal Performance: Designed to handle high thermal environments, it offers stability and reliability in demanding conditions.
5. Compact Package: Usually available in a small footprint, allowing for space-efficient designs in modern electronics.
These characteristics make the FDMS86252L suitable for use in DC-DC converters, motor drivers, and other power management circuits.
Package
Pinout
1. Gate1 - Input for control of the first N-channel MOSFET.
2. Drain1 - Drain terminal for the first N-channel MOSFET.
3. Source1 - Source terminal for the first N-channel MOSFET.
4. Gate2 - Input for control of the second N-channel MOSFET.
5. Drain2 - Drain terminal for the second N-channel MOSFET.
6. Source2 - Source terminal for the second N-channel MOSFET.
7. N/C - No connection; not used.
8. N/C - No connection; not used.
Each N-channel MOSFET can handle high current and voltage, making the FDMS86252L suitable for power management applications.
Manufacturer
Application
Equivalent
1. AO3400
2. IRLZ44N
3. BSS138
4. NXP BSS84
Ensure to verify specifications like voltage, current, and RDS(on) for compatibility in your application.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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