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FDMS86550
MOSFET N-CH 60V 32A/155A POWER56
- Hersteller
- Fr. Teil #FDMS86550
- Paket PowerTDFN-8
- Datenblatt FDMS86550 DataSheet
- Auf Lager4490
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 32A (Ta), 155A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 8V, 10V |
| RdsOn(Max)@IdVgs | 1.65mOhm @ 32A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 154 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 11530 pF @ 30 V |
| PowerDissipation(Max) | 2.7W (Ta), 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Übersicht
Description
Key features may include adjustable output voltage, over-current protection, thermal shutdown, and a compact package suitable for space-constrained designs. FDMS86550 is commonly used in smartphones, tablets, and wearables, where power efficiency and thermal management are critical. Its ease of integration with other components makes it a popular choice for designers aiming to enhance the overall performance of their electronic devices.
Features
1. Low On-Resistance (RDS(on)): This ensures minimal power loss and improved efficiency during operation.
2. High Current Rating: Capable of handling significant load currents, suitable for high-power applications.
3. Fast Switching Speed: Facilitates efficient operation in high-frequency applications.
4. High Breakdown Voltage: Offers robust performance under high-voltage conditions.
5. Thermal Resistance: Designed to dissipate heat effectively, enhancing reliability and performance.
6. Compact Package: Typically available in surface mount packages, saving space on PCBs.
Overall, the FDMS86550 is ideal for applications in power converters, motor drivers, and other electronic systems where efficiency and reliability are critical.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the drain of the first MOSFET.
3. Source 1 (S1) - Connects to the source of the first MOSFET.
4. Source 2 (S2) - Connects to the source of the second MOSFET.
5. Drain 2 (D2) - Connects to the drain of the second MOSFET.
6. Gate 2 (G2) - Controls the second N-channel MOSFET.
7. Drain 1 (D1) - Common drain for the first MOSFET.
8. Drain 2 (D2) - Common drain for the second MOSFET.
This MOSFET features low ON-resistance and high-speed switching, making it suitable for applications such as DC-DC converters and synchronous rectification.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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