FDP027N08B-F102

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FDP027N08B-F102

MOSFET N-CH 80V 120A TO220-3

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Spezifikationen

Supplier onsemi
Package Tube
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.7mOhm @ 100A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 178 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 13530 pF @ 40 V
PowerDissipation(Max) 246W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Übersicht

Description

FDP027N08B-F102 is an 80-V, 27-A N-channel enhancement-mode power MOSFET in a power package. It is used as the switching element in switching power supplies, DC-DC converters, motor drives, and other high-current switching circuits.
Key points:
- Type: N-channel enhancement MOSFET
- Ratings: Vds ≈ 80 V; Id ≈ 27 A (continuous)
- On-resistance: low Rds(on) (typical in the tens of milliohms range; depends on Vgs)
- Gate drive: typically requires around 10 V for lowest Rds(on); Vgs(th) ~1–4 V; max Vgs ±20 V
- Package: Power package (e.g., D²PAK/TO-263-style) with tab for heatsinking
- Features: suitable for high dv/dt and di/dt; avalanche rated for rugged switching
- Applications: SMPS, buck/boost converters, synchronous rectification, motor control
Note: For exact Rds(on), thermal specs, pinout, and packaging, consult the manufacturer’s FDP027N08B-F102 datasheet.

Features

- N-channel enhancement-mode power MOSFET
- 80 V maximum drain–source voltage (Vds)
- 27 A continuous drain current (Id)
- Low on-resistance for high-efficiency switching
- Logic‑level gate drive (compatible with common gate voltages)
- Fast switching with low gate charge
- Built-in body diode for reverse conduction
- Avalanche rugged with defined energy rating
- Suitable for switching power supplies, DC-DC converters, motor drives
- RoHS-compliant lead-free variant (F102)

Package

The FDP027N08B-F102 comes in a D2PAK (TO-263) surface-mount power package.

Pinout

- Pin count: 3 electrical pins (Gate, Drain, Source) plus an exposed drain tab (Drain) — effectively 4 terminals.
- Function: N-channel enhancement-mode power MOSFET for switching in power electronics (Gate drives the channel between Drain and Source). Pinout typically: Pin1 Gate, Pin2 Drain, Pin3 Source; tab = Drain.

Manufacturer

Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor). It is an American semiconductor company that designs and manufactures discrete devices (like MOSFETs) and integrated circuits.

Application

- Switching power supplies and DC-DC converters
- Motor drives (BLDC, PMSM) and other power-electronics loads
- Solar/renewable inverters and energy systems
- Automotive power electronics (inverters, DC-DC, load switching)
- Uninterruptible power supplies (UPS) and energy-management circuits
- Industrial power supplies and adapters

Equivalent

I don’t have that part’s datasheet here. To give accurate equivalents I need its key specs (VDS, ID, RDS(on) at VGS, package, and switching/gate‑charge). Please supply those or allow me to look up the datasheet and I’ll list matching replacement MOSFETs.

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