FDP120N10

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FDP120N10

MOSFET N-CH 100V 74A TO220-3

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Spezifikationen

Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5605 pF @ 25 V
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number FDP120

Übersicht

Description

The FDP120N10 is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 120A, making it suitable for various power management tasks, such as in power supplies, converters, and motor control systems.
Key specifications include low on-resistance (R_DS(on)), which minimizes conduction losses, and fast switching speeds that enhance overall efficiency in high-frequency applications. The device is typically constructed in a TO-220 package, facilitating effective heat dissipation.
The FDP120N10 is often used in designs requiring robust performance, such as in automotive, industrial, and renewable energy applications. Its characteristics make it an ideal choice for engineers seeking reliable components for power electronics.
Overall, it combines high performance with versatility, catering to a wide range of electronic applications.

Features

The FDP120N10 is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) of up to 100V.
2. Current Rating: Continuous drain current (I_D) can reach 120A at a case temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 10 mΩ, ensuring minimal power loss and high efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, suitable for low-voltage drive applications.
5. Fast Switching Speed: Capable of rapid switching, making it ideal for power conversion and amplifier circuits.
6. Package Type: Available in a TO-220 package, providing good thermal performance for heat dissipation.
7. Thermal Resistance: Low thermal resistance for effective heat management, enhancing reliability in various applications.
Overall, the FDP120N10 is widely used in power supplies, DC-DC converters, and motor control systems due to its robust performance and efficiency.

Package

The FDP120N10 is typically packaged in a TO-220 or DPAK format. These packages facilitate heat dissipation and provide suitable mounting options for power applications.

Pinout

The FDP120N10 is an N-channel MOSFET commonly used in power applications. It has a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET and is where the voltage is applied to turn the device on or off.
2. Drain (D) - The drain is the terminal through which current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - The source is the terminal where the current enters the MOSFET.
The FDP120N10 is designed to handle high current and voltage, making it suitable for applications such as power management, switching, and amplification. The device features a low on-resistance (R_DS(on)), which helps in reducing power losses during operation.

Manufacturer

The FDP120N10 is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor after their acquisition in 2016. Fairchild Semiconductor is known for its production of a wide range of semiconductor components, including power management devices, analog ICs, and discrete components. The company specializes in providing solutions for various industries such as automotive, industrial, telecommunications, and consumer electronics. Fairchild has a strong reputation for innovation and quality in the semiconductor market, focusing on enhancing energy efficiency and performance in electronic applications.

Application

The FDP120N10 is a N-channel MOSFET commonly used in power management applications. Its primary areas include DC-DC converters, motor drivers, power supplies, inverters, and switching regulators. It is suitable for high-frequency and high-efficiency applications due to its low on-resistance and fast switching capabilities. Additionally, it is utilized in automotive systems, electric vehicles, and renewable energy systems like solar inverters.

Equivalent

The FDP120N10 is an N-channel MOSFET with a 100V rating and 120A current. Equivalent products include the IRF840, STP120N10, and FQP120N10. Always verify specifications like RDS(on), VGS(th), and package type for compatibility in your application.

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