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FDP18N50
MOSFET N-CH 500V 18A TO220-3
- Hersteller
- Fr. Teil #FDP18N50
- Paket TO-220-3
- Datenblatt FDP18N50 DataSheet
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Spezifikationen
| Package | Bulk,Tube |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 265mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2860 pF @ 25 V |
| PowerDissipation(Max) | 235W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
Übersicht
Description
This type of transistor is commonly used in power amplification, switching applications, and in power supply circuits due to its fast switching capabilities and robustness. Its design often includes a low on-resistance, which minimizes power loss and heat generation during operation.
FDP18N50 is popular in industries such as telecommunications, automotive, and renewable energy for applications ranging from inverters to motor drivers. Proper thermal management and circuit design are essential for maximizing its performance and reliability in these applications.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: 500V maximum drain-source voltage (Vds).
3. Continuous Drain Current: Up to 18A, suitable for various power applications.
4. RDS(on): Low on-resistance (typically around 0.6Ω), which minimizes conduction losses and improves efficiency.
5. Gate Threshold Voltage: Typically between 2-4V, allowing for easy drive from standard logic levels.
6. Fast Switching: Capable of high-speed switching, making it ideal for applications in switch-mode power supplies, inverters, and motor drives.
7. Package: Available in TO-220 and DPAK packages, providing good thermal performance.
8. Thermal Resistance: Low thermal resistance, which aids in effective heat dissipation.
Overall, the FDP18N50 is well-suited for applications requiring high voltage and moderate current with efficient thermal management.
Package
Pinout
### Pin Count and Functions:
1. Gate (G): This pin controls the MOSFET and is used to apply a voltage to turn the device on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is turned on; it connects to the load.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit.
### Key Specs:
- Maximum Drain-Source Voltage (V_DS): 500V
- Continuous Drain Current (I_D): 18A
This device is commonly used in high-voltage applications, including power supplies and motor controls.
Manufacturer
Application
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