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FDPF10N60ZUT
POWER FIELD-EFFECT TRANSISTOR, 9
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Spezifikationen
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 25 V |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack |
Übersicht
Description
The MOSFET is housed in a TO-220 package, allowing for efficient heat dissipation, making it ideal for applications requiring reliable thermal management. Its gate threshold voltage (V_GS(th)) and fast switching capabilities make it suitable for modern electronic devices that demand rapid on/off switching.
When designing with the FDPF10N60ZUT, considerations include proper heat sinking, gate drive voltage, and maximum ratings to ensure optimal performance and reliability. Overall, it is a robust solution for engineers looking to manage high-power applications efficiently.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current (I_D) of 10A, allowing for substantial load handling.
3. On-Resistance: The typical on-resistance (R_DS(on)) is low, around 0.45 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage is between 2V to 4V, enabling it to switch on effectively with low drive voltages.
5. Fast Switching Speed: It features fast switching capabilities, suitable for applications in power supplies and converters.
6. Package Type: Available in TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the FDPF10N60ZUT is ideal for applications requiring high efficiency and reliability in power management and switching.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation. It is where the voltage is applied to turn the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on state. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for current.
The FDPF10N60ZUT is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 10A, making it suitable for various power management applications in devices like power supplies and motor controllers.
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Application
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Zahlungen
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Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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