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FDS4480
MOSFET N-CH 40V 10.8A 8SOIC
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- Fr. Teil #FDS4480
- Paket
- Datenblatt FDS4480 DataSheet
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Spezifikationen
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 10.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10.8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | +30V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1686 pF @ 20 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS44 |
Übersicht
Description
Features
1. Low On-Resistance (RDS(on)): This leads to reduced power losses and improved efficiency in switching applications.
2. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-frequency operations.
3. Thermal Management: Designed with a robust thermal performance to handle high current loads while maintaining reliability.
4. Compact Package: Available in a compact SO-8 or similar package, allowing for space-efficient designs.
5. Gate Threshold Voltage: Optimized for logic-level operation, enabling compatibility with low-voltage microcontrollers.
6. High Voltage Rating: Supports a wide voltage range, enhancing versatility in various circuit designs.
7. Enhanced Reliability: Built to withstand harsh environmental conditions, making it suitable for demanding applications.
These features make the FDS4480 ideal for use in power management, motor control, and other applications requiring efficient and reliable MOSFET solutions.
Package
Pinout
1. Gate 1 (G1): Input for the first N-channel MOSFET gate control.
2. Drain 1 (D1): Drain connection for the first N-channel MOSFET.
3. Source 1 (S1): Source connection for the first N-channel MOSFET.
4. Gate 2 (G2): Input for the second N-channel MOSFET gate control.
5. Drain 2 (D2): Drain connection for the second N-channel MOSFET.
6. Source 2 (S2): Source connection for the second N-channel MOSFET.
7. Common Source/Drain (often not labeled): May serve as a common connection for both devices.
8. Thermal Pad (if applicable): Used for heat dissipation.
The FDS4480 is commonly used in load switching, power management, and similar applications due to its low RDS(on) and high efficiency.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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