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FDS6681Z
MOSFET P-CH 30V 20A 8SOIC
- Hersteller
- Fr. Teil #FDS6681Z
- Paket SOP8
- Datenblatt FDS6681Z DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.6mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 260 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 7540 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
Übersicht
Description
Key specifications typically include a high voltage rating, low gate threshold voltage, and fast switching capabilities, allowing it to handle significant current levels while maintaining thermal stability. The device's compact packaging and enhanced reliability make it ideal for space-constrained applications in consumer electronics and automotive systems.
FDS6681Z is often noted for its ease of integration into circuit designs and its ability to improve overall system efficiency. Users should refer to the datasheet for detailed electrical characteristics, thermal management guidelines, and recommended operating conditions to ensure optimal performance in their specific applications.
Features
1. Type: N-channel enhancement mode MOSFET.
2. Voltage Rating: 30V maximum drain-source voltage (Vds).
3. Current Rating: Capable of handling continuous drain current up to 90A.
4. Rds(on): Low on-resistance, typically around 5.4 mΩ, facilitating reduced conduction losses.
5. Gate Threshold Voltage: Suitable for low-voltage drive applications, with a gate threshold voltage (Vgs) ranging from 1V to 3V.
6. Package: Available in a DPAK package for efficient thermal management and space-saving.
7. Fast Switching: Optimized for fast switching speeds, making it ideal for applications such as DC-DC converters, power management, and motor control.
8. Thermal Resistance: Low thermal resistance ensures effective heat dissipation.
These features make the FDS6681Z suitable for various applications in consumer electronics, automotive, and industrial sectors.
Package
Pinout
The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Gate of the first N-channel MOSFET.
2. Drain 1 (D1) - Drain of the first N-channel MOSFET.
3. Source 1 (S1) - Source of the first N-channel MOSFET.
4. Source 2 (S2) - Source of the second N-channel MOSFET.
5. Drain 2 (D2) - Drain of the second N-channel MOSFET.
6. Gate 2 (G2) - Gate of the second N-channel MOSFET.
7. Drain 3 (D3) - Common Drain connection (typically not used).
8. NC (Not Connected) - Not connected internally.
The FDS6681Z is commonly used in power management applications due to its low R_DS(on) and fast switching capabilities.
Manufacturer
Application
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Zahlungen
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