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FDS8958A
POWER FIELD-EFFECT TRANSISTOR, 7
- Hersteller
- Fr. Teil #FDS8958A
- Paket SOIC-8
- Datenblatt FDS8958A DataSheet
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Spezifikationen
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 7A, 5A |
| RdsOn(Max)@IdVgs | 28mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 575pF @ 15V |
| Power-Max | 900mW |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
The FDS8958A is housed in a compact package, which aids in space-saving designs. Its fast switching speed and low gate charge facilitate minimal power loss during operation. Furthermore, the MOSFET is characterized by high thermal performance, allowing for reliable operation over a range of temperatures.
Overall, the FDS8958A is favored in various electronic designs for its efficiency, thermal management, and compact size, making it an essential component in modern power electronics.
Features
1. Low On-Resistance: It offers a low R_DS(on), which minimizes power loss and improves efficiency in applications such as power supplies and battery management systems.
2. High-Speed Switching: The device supports fast switching speeds, making it suitable for high-frequency applications.
3. Enhanced Thermal Performance: It has a robust thermal resistance, allowing it to operate efficiently at elevated temperatures.
4. Low Gate Charge: Reduced gate charge improves switching performance and reduces drive power requirements.
5. Dual Configuration: The package contains two MOSFETs, enabling compact designs and facilitating parallel configurations for higher current applications.
6. Compact Package: Available in a small footprint, which is ideal for space-constrained applications.
These features make the FDS8958A suitable for use in DC-DC converters, motor controls, and other power switching applications.
Package
Pinout
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Source 1 (S1): Connects to the source of the first N-channel MOSFET.
3. Drain 1 (D1): Connects to the drain of the first N-channel MOSFET.
4. Source 2 (S2): Connects to the source of the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the drain of the second N-channel MOSFET.
6. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
7. Common Source (CS): Used for the common source connection.
8. NC (No Connection): Not connected internally, can be left floating.
This device is typically used for load switching and power management applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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