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FDS9412
MOSFET N-CH 30V 7.9A 8SOIC
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Spezifikationen
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS94 |
Übersicht
Description
Key specifications typically include a voltage rating of 30V and a current rating that can handle significant loads, with efficiency optimized for modern electronics. The device is packaged in a compact surface-mount format, facilitating easy integration into circuit designs.
Manufacturers may provide application notes and reference designs to help engineers utilize the FDS9412 effectively, emphasizing its capability to reduce power losses and increase system reliability. As part of a broader portfolio of MOSFETs, the FDS9412 plays a crucial role in enabling efficient energy management in consumer electronics, automotive applications, and industrial systems.
Features
1. Low On-Resistance: The FDS9412 offers a low R_DS(on) value, which minimizes power loss and improves efficiency in power management and conversion applications.
2. High Current Capability: It supports high continuous current ratings, making it suitable for use in various configurations, including synchronous rectification.
3. Fast Switching Speed: The device enables rapid switching, which is essential for high-frequency applications and enhances overall system performance.
4. Compact Package: Typically available in a compact surface-mount package, it aids in space-saving designs and simplifies PCB layout.
5. Low Gate Charge: The low gate charge (Q_g) reduces the drive requirements and improves efficiency in switching applications.
6. Thermal Performance: The device is designed for effective thermal management, with a robust thermal resistance to ensure reliability in demanding environments.
These features make the FDS9412 an excellent choice for applications like power supplies, motor drivers, and DC-DC converters.
Package
Pinout
### Pin Count:
- Total Pins: 8
### Pin Functions:
1. Gate (G1): Controls the switching of the first N-channel MOSFET.
2. Drain (D1): Connects to the load for the first MOSFET.
3. Source (S1): Ground or negative voltage connection for the first MOSFET.
4. Gate (G2): Controls the switching of the second N-channel MOSFET.
5. Drain (D2): Connects to the load for the second MOSFET.
6. Source (S2): Ground or negative voltage connection for the second MOSFET.
7. Drain (D1/D2): Common or shared drain connection (depends on specific application).
8. Source (S1/S2): Common or shared source connection (depends on specific application).
This MOSFET configuration is typically used in power management applications, such as DC-DC converters.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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