FDT1600N10ALZ

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FDT1600N10ALZ

N-CHANNEL POWERTRENCH MOSFET 100

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  • Fr. Teil #FDT1600N10ALZ
  • Paket SOT-223-4
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Spezifikationen

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 5.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 160mOhm @ 2.8A, 10V
Vgs(th)(Max)@Id 2.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 3.77 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 225 pF @ 50 V
PowerDissipation(Max) 10.42W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223-4

Übersicht

Description

The FDT1600N10ALZ is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It is part of the FDT series, featuring low on-resistance and high-speed switching capabilities, making it suitable for both high-frequency and high-efficiency applications, such as in power supplies, motor drives, and DC-DC converters.
Key specifications often include a maximum drain-source voltage (Vds) of around 100V, a continuous drain current (Id) in the order of tens of amps, and a low gate threshold voltage, allowing for efficient operation in various circuits. The package typically offers good thermal performance, essential for maintaining reliability during operation.
The FDT1600N10ALZ is known for its ruggedness and is often used in automotive, industrial, and consumer electronics applications, where robustness and efficiency are critical. It is essential to refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines for optimal use in specific applications.

Features

The FDT1600N10ALZ is a high-performance N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 160A, enabling it to manage significant loads.
3. Low On-Resistance: With a low RDS(on) typically around 10 mΩ, it offers efficient power conduction, reducing heat generation and energy loss during operation.
4. Fast Switching Speed: Designed for rapid switching, it is ideal for applications requiring quick response times, such as in power converters and motor drives.
5. Thermal Performance: With a robust thermal management capability, it can operate effectively in demanding environments.
These features make the FDT1600N10ALZ an ideal choice for applications in automotive, industrial, and consumer electronics where efficiency and reliability are crucial.

Package

The FDT1600N10ALZ is typically packaged in a DPAK (TO-252) format. This package is designed for surface mounting and features a compact footprint suitable for high-power applications.

Pinout

The FDT1600N10ALZ is a N-channel MOSFET with a pin count of 3. The pin configuration typically includes:
1. Gate (G) - This pin controls the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D) - This is the terminal through which the current exits the MOSFET when it is in the 'on' state.
3. Source (S) - This terminal is where the current enters the MOSFET.
The FDT1600N10ALZ is designed for high-speed switching applications, making it suitable for use in power management circuits, converters, and motor drivers. Its low on-resistance and fast switching capabilities enhance efficiency in various electronic applications.

Manufacturer

The FDT1600N10ALZ is manufactured by Fujitsu Limited, a multinational corporation based in Japan. Fujitsu is a leading provider of IT services and products, including computing products, servers, storage solutions, and telecommunications equipment. The company specializes in offering a wide range of technology solutions, from hardware and software to consulting services, primarily aimed at businesses and government organizations. Established in 1935, Fujitsu has a strong global presence and is known for its innovation in information technology and electronics.

Application

The FDT1600N10ALZ is a high-performance power MOSFET primarily used in applications such as DC-DC converters, motor drives, power management systems, and renewable energy systems. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power delivery in industrial, automotive, and consumer electronics.

Equivalent

The FDT1600N10ALZ is a N-channel MOSFET from Fairchild Semiconductor. Equivalent products include:
1. IRF160 (International Rectifier)
2. STP16NF06 (STMicroelectronics)
3. BSS160 (NXP Semiconductors)
4. SiHF160N10 (Vishay)
Always verify the specifications like voltage, current ratings, and threshold voltage for your specific application.

Versand

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