FGA50T65SHD

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FGA50T65SHD

IGBT TRENCH/FS 650V 100A TO3PN

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Spezifikationen

Package Tube
ProductStatus Last Time Buy
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 100 A
Current-CollectorPulsed(Icm) 150 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 50A
Power-Max 319 W
SwitchingEnergy 1.28mJ (on), 384µJ (off)
InputType Standard
GateCharge 87 nC
Td(on/off)@25°C 22.4ns/73.6ns
TestCondition 400V, 50A, 6Ohm, 15V
ReverseRecoveryTime(trr) 34.6 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3

Übersicht

Description

The FGA50T65SHD is a high-performance power transistor, specifically a silicon carbide (SiC) MOSFET designed for high-voltage applications. With a rated voltage of 650V and a current handling capability of 50A, it is well-suited for demanding tasks such as inverters, power supplies, and motor drives.
Key features include low on-resistance, fast switching speeds, and high thermal conductivity, which result in improved efficiency and reduced heat generation. Its SiC technology allows for operation at higher temperatures and frequencies than traditional silicon devices, making it ideal for applications in electric vehicles, renewable energy systems, and industrial automation.
The device typically comes in a TO-247 package, ensuring robust performance and ease of integration into various systems. Overall, the FGA50T65SHD enhances power conversion efficiency and reliability in advanced electronic designs.

Features

The FGA50T65SHD is a high-performance power MOSFET designed for various applications, including power management and inverters. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Offers a continuous current rating of 50A, enabling robust performance under significant loads.
3. R_DS(on): Low on-resistance (typically around 0.15Ω), which enhances efficiency and reduces power loss.
4. Fast Switching: Optimized for high-speed switching operations, improving overall system efficiency.
5. Thermal Performance: Designed with excellent thermal characteristics, allowing for effective heat dissipation and reliability in demanding environments.
6. Package Type: Usually available in TO-247 or similar packages, facilitating easy integration into various circuit designs.
These features make the FGA50T65SHD a reliable choice for applications in renewable energy systems, electric vehicles, and industrial drives.

Package

The FGA50T65SHD is typically packaged in a TO-247 format, which is a type of power semiconductor package designed for high-power applications. This package provides effective heat dissipation and is suitable for various electronic applications.

Pinout

The FGA50T65SHD is a high-voltage MOSFET, specifically designed for power applications. It typically features a TO-247 package that includes a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET and switch it on or off by applying a voltage.
2. Drain (D): The drain pin is where the main current flows into the device. It connects to the load.
3. Source (S): This pin serves as the return path for the current, connecting to ground in most applications.
This device is rated for 650V and is suitable for high-efficiency applications in power electronics, including inverters and converters. Always refer to the manufacturer's datasheet for specific details and electrical characteristics.

Manufacturer

The FGA50T65SHD is manufactured by ON Semiconductor, a prominent semiconductor company. ON Semiconductor specializes in the design and manufacture of a wide range of electronic components, including power management, analog, and mixed-signal devices. The company serves a variety of markets, including automotive, industrial, communications, and consumer electronics. Established through various mergers and acquisitions, ON Semiconductor has positioned itself as a leading supplier of high-performance silicon solutions, focusing on energy efficiency and sustainability.

Application

The FGA50T65SHD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including power inverters for renewable energy systems (like solar and wind), motor drives, industrial power supplies, and electric vehicles. It is also suitable for UPS systems and induction heating. Its high efficiency and thermal performance make it ideal for applications requiring reliable power conversion and control.

Equivalent

The FGA50T65SHD is a 650V, 50A IGBT. Equivalent products include the Infineon IGBT K30N65W, ON Semiconductor MGD50N65, and the Vishay IGBT FGA50N65. Always verify specifications like Vce, Ic, and switching characteristics for compatibility in specific applications.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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