FGH80N60FD2TU

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FGH80N60FD2TU

IGBT 600V 80A 290W TO247

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  • Fr. Teil #FGH80N60FD2TU
  • Paket TO-247-3
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Spezifikationen

Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2.4V @ 15V, 40A
Power-Max 290 W
SwitchingEnergy 1mJ (on), 520µJ (off)
InputType Standard
GateCharge 120 nC
Td(on/off)@25°C 21ns/126ns
TestCondition 400V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 61 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Übersicht

Description

The FGH80N60FD2TU is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a voltage rating of 600V and a current rating of 80A, making it suitable for high-voltage and high-current applications such as power supplies, motor drivers, and inverters.
This MOSFET exhibits low on-resistance (RDS(on)), which minimizes conduction losses and improves efficiency. It also has a fast switching speed, enabling efficient operation in high-frequency applications. The device is packaged in a TO-247 format, allowing for easy heat dissipation and thermal management.
Key applications include renewable energy systems, automotive power management, and industrial automation. Overall, the FGH80N60FD2TU is a reliable choice for engineers seeking efficient and effective power solutions in demanding environments.

Features

The FGH80N60FD2TU is a high-performance N-channel MOSFET designed for power applications. Its key features include:
1. Voltage Rating: Up to 600V, suitable for high-voltage applications.
2. Continuous Drain Current: 80A, providing robust current handling capability.
3. RDS(on): Low on-resistance (typically around 0.08 ohms), ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: Optimal gate drive voltage for enhanced switching performance.
5. Fast Switching Speed: Designed for high-frequency applications, improving efficiency in switching converters.
6. Thermal Performance: Good thermal stability and packaging for effective heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and other high-efficiency switching applications.
Overall, the FGH80N60FD2TU is a versatile MOSFET suited for demanding power management tasks, enhancing efficiency and performance in various electronic circuits.

Package

The FGH80N60FD2TU is packaged in a TO-247 type housing. This package is designed for high-power applications, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The FGH80N60FD2TU is an N-channel MOSFET manufactured by Fairchild Semiconductor. It features a pin count of 3. The primary functions of the pins are:
1. Gate (G) - This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D) - This is the output pin where the load is connected, allowing current to flow from the drain to the source when the MOSFET is activated.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit, allowing current to exit the device.
The FGH80N60FD2TU has a maximum continuous drain current of 80A and a maximum drain-source voltage of 600V, making it suitable for high-power applications.

Manufacturer

The FGH80N60FD2TU is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in a wide range of semiconductor solutions, including power management, analog, and logic devices, as well as sensors and connectivity products. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Their focus on energy-efficient technologies and innovation positions them as a key player in the semiconductor market.

Application

The FGH80N60FD2TU is an N-channel MOSFET primarily used in power electronics applications. Common areas include:
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters.
2. Motor Control: Used in drives for electric motors.
3. Inverters: In renewable energy systems like solar inverters.
4. Automotive Electronics: For electric vehicle power management.
5. Industrial Equipment: In automation and power management systems.
Its high voltage and current ratings make it suitable for various demanding applications.

Equivalent

The FGH80N60FD2TU is a MOSFET transistor primarily used in power applications. Equivalent products include the STP80NF60, IRF840, and MTP80N60E. For precise applications, check parameters such as voltage rating, current rating, RDS(on), and package type to ensure compatibility.

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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