FGL40N120ANDTU

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FGL40N120ANDTU

IGBT NPT 1200V 64A TO264-3

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Spezifikationen

Package Bulk,Tube
ProductStatus Not For New Designs
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 64 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 3.2V @ 15V, 40A
Power-Max 500 W
SwitchingEnergy 2.3mJ (on), 1.1mJ (off)
InputType Standard
GateCharge 220 nC
Td(on/off)@25°C 15ns/110ns
TestCondition 600V, 40A, 5Ohm, 15V
ReverseRecoveryTime(trr) 112 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-264-3, TO-264AA

Übersicht

Description

The FGL40N120ANDTU is a high-voltage, N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 1200V, a continuous drain current (I_D) of 40A, and a low on-resistance (R_DS(on)) for efficient switching performance. This MOSFET is ideal for applications such as high-efficiency power supplies, motor drives, and renewable energy systems, including solar inverters.
The device is housed in a TO-220 package, facilitating heat dissipation and ease of mounting on heatsinks. Its fast switching capabilities and robust construction make it suitable for demanding environments.
Key parameters include a gate threshold voltage (V_GS(th)) typically between 2V to 4V, ensuring efficient gate drive requirements. Additionally, its reverse recovery characteristics are optimized for applications requiring rapid switching. Overall, the FGL40N120ANDTU is a reliable choice for engineers seeking high-performance solutions in power conversion and control systems.

Features

The FGL40N120ANDTU is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high voltage and current handling. Key features include:
1. Voltage Rating: 1200V, enabling use in high-voltage applications.
2. Current Rating: 40A, suitable for medium to high-power applications.
3. Low Saturation Voltage: Offers improved efficiency and reduced power loss.
4. Fast Switching Speed: Facilitates higher frequency operation, optimizing performance in inverters and converters.
5. Thermal Stability: Enhanced thermal performance, allowing for operation in demanding environments.
6. Robust Package: Typically housed in a TO-247 package, ensuring good thermal management and mechanical robustness.
7. Suitable for Various Applications: Ideal for use in motor drives, power supplies, and renewable energy systems such as solar inverters.
These features make the FGL40N120ANDTU a reliable choice for engineers seeking efficient power management solutions.

Package

The FGL40N120ANDTU is packaged in a TO-247 form factor. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance in power electronics.

Pinout

The FGL40N120ANDTU is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 6. This component is designed for high voltage applications and features a rated voltage of 1200V with a continuous collector current rating of 40A.
The pins typically have the following functions:
1. Gate (G): Controls the switching of the IGBT.
2. Collector 1 (C1): Connects to the positive side of the load.
3. Collector 2 (C2): Connects to the positive side of the load (generally for parallel connections in modules).
4. Emitter (E): Connects to the negative side of the load.
5. Thermal pad (T): For heat dissipation, ensuring effective thermal management.
6. Insulation (I): Provides electrical isolation and structural integrity.
This device is commonly used in applications such as motor drives, power inverters, and other power electronic converters.

Manufacturer

The FGL40N120ANDTU is manufactured by Infineon Technologies, a leading global semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and integrated circuits for various applications. The company focuses on sectors such as automotive, industrial, and communication, providing innovative technologies that enhance efficiency and sustainability. Infineon is recognized for its advancements in power management, automotive electronics, and security solutions.

Application

The FGL40N120ANDTU is a 1200V, 40A IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its main areas include industrial motor drives, power inverters for renewable energy systems (like solar and wind), induction heating, and high-frequency welding. Additionally, it is suitable for applications in traction systems and uninterruptible power supplies (UPS).

Equivalent

The FGL40N120ANDTU is an IGBT module. Equivalent products include the Infineon IGBT modules such as the FZ1200R17KF4, the ABB 5SNA 1200/30, and the Mitsubishi CM120DY-24H. Always verify specifications and ratings to ensure compatibility in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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