FGY75N60SMD

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FGY75N60SMD

IGBT 600V 150A 750W POWER-247

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Spezifikationen

Supplier Rochester Electronics, LLC,onsemi
Package Bulk,Tube
ProductStatus Obsolete
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 150 A
Current-CollectorPulsed(Icm) 225 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 75A
Power-Max 750 W
SwitchingEnergy 2.3mJ (on), 770µJ (off)
InputType Standard
GateCharge 248 nC
Td(on/off)@25°C 24ns/136ns
TestCondition 400V, 75A, 3Ohm, 15V
ReverseRecoveryTime(trr) 55 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3 Variant

Übersicht

Description

FGY75N60SMD is a high‑voltage N‑channel power MOSFET intended for switching power electronics. Key points:
- Voltage/current: VDS ~ 600 V; continuous current around 75 A (manufacturer dependent).
- On-resistance: RDS(on) typically in the 0.6–1.0 Ω range at VGS ≈ 10 V (varies by part).
- Package: SMD package (commonly D2PAK/TO‑263 style).
- Gate: Threshold roughly 2–4 V; driven with 10 V (standard) or per datasheet.
- Applications: Switch-mode power supplies, motor drives, inverters, solar inverters, and other high‑voltage switching tasks.
- Notes: Heat sinking and proper gate drive are important. For exact electrical characteristics, package details, and safe operating area, consult the specific manufacturer’s datasheet.

Features

Here are the typical features of FGY75N60SMD (power MOSFET in an SMD package):
- Type: N-channel enhancement-mode power MOSFET
- Voltage rating: around 600 V (high-voltage offline switching)
- Current rating: roughly 75 A (continuous, depends on temp/packaging)
- On-resistance: in the low-Ω to mid-Ω range (varies with temperature)
- Switching: fast switching capable for switch-mode power supplies
- Body diode: intrinsic fast diode with avalanche ruggedness
- Packaging: surface-mount power package (SMD), suitable for PCB mounting and heatsinking
- Applications: offline SMPS, power supplies, motor drivers, high-voltage switching
Note: Exact electrical values (Vds, Id, Rds(on), etc.) vary by lot and condition. Please refer to the official datasheet for precise specifications and thermal characteristics.

Package

D2PAK (TO-263) surface-mount package.

Pinout

FGY75N60SMD is a 600 V, 75 A N‑channel power MOSFET in an SMD power package. It has three electrical pins plus a large metal mounting/tab:
- Pin 1: Gate (G) — control terminal.
- Pin 2: Drain (D) — main high‑voltage terminal (also tied to the metal mounting/tab).
- Pin 3: Source (S) — return/low side terminal (substrate tied; body diode from D→S).
(Orientation: looking at the component front/marking side, pins are typically numbered left-to-right as G, D, S; the tab is D.)

Application

FGY75N60SMD is a high-voltage, high-current N-channel MOSFET (≈600 V, ≈75 A) in an SMD package. Common applications:
- switch-mode power supplies (SMPS) and PFC stages
- DC-DC converters and AC-DC inverters
- motor/servo drives
- solar/wind inverters and UPS systems
- welding/induction heating power electronics
- industrial power stages and high-power switching networks

Equivalent

Do you mean FGH75N60SMD (Infineon IGBT 75A/600V)? Please confirm the exact part number so I can list accurate equivalents.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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