FGY75T120SQDN

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FGY75T120SQDN

IGBT 1200V 75A UFS

  • Hersteller
  • Fr. Teil #FGY75T120SQDN
  • Paket TO-247-3
  • Datenblatt
  • Auf Lager7819

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Spezifikationen

Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 150 A
Current-CollectorPulsed(Icm) 300 A
Vce(on)(Max)@VgeIc 1.95V @ 15V, 75A
Power-Max 790 W
SwitchingEnergy 6.25mJ (on), 1.96mJ (off)
InputType Standard
GateCharge 399 nC
Td(on/off)@25°C 64ns/332ns
TestCondition 600V, 75A, 10Ohm, 15V
ReverseRecoveryTime(trr) 99 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3 Variant

Übersicht

Description

The FGY75T120SQDN is a high-performance insulated gate bipolar transistor (IGBT) designed for various power electronic applications, such as motor drives and industrial systems. It combines high voltage and current capabilities, making it suitable for demanding environments.
Key features include:
1. Voltage Rating: Typically rated for 1200V, allowing it to handle significant voltage spikes.
2. Current Rating: Offers a high current capacity, usually around 75A, enabling efficient power management.
3. Low Switching Losses: Designed for high efficiency, minimizing energy losses during switching operations.
4. Thermal Performance: Enhanced thermal management properties facilitate reliable operation under high temperatures.
5. Applications: Commonly used in renewable energy systems, inverters, and other industrial applications requiring robust switching capabilities.
Overall, the FGY75T120SQDN is a versatile component that supports efficient power conversion and management, crucial for modern electrical systems.

Features

The FGY75T120SQDN is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various industrial applications. Key features include:
1. Voltage Rating: Typically rated for 1200V, making it suitable for medium voltage applications.
2. Current Rating: Supports up to 75A, allowing it to handle significant power loads.
3. Fast Switching: Designed for high switching speeds, contributing to improved efficiency in inverter and converter applications.
4. Low Switching Losses: Optimized for reduced losses during operation, enhancing overall system performance.
5. Thermal Management: Integrated with a robust thermal design to ensure effective heat dissipation.
6. High Reliability: Built to withstand harsh operating conditions, ensuring long-term reliability and durability.
7. Compact Design: Space-efficient module design facilitates easy integration into various systems.
These features make the FGY75T120SQDN suitable for use in renewable energy systems, motor drives, and other power electronics applications.

Package

The FGY75T120SQDN is packaged in an A-PAK or TO-247 package type, which features a robust design suitable for high-power applications.

Pinout

The FGY75T120SQDN is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 6. It is designed for high-power applications, providing efficient switching and low conduction losses. The pin functions are as follows:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C1, C2): Connects to the high-voltage side of the circuit.
3. Emitter (E): Connects to the low-voltage side and is the output for the current.
This module is typically used in power inverters, motor drives, and other high-frequency applications due to its capability to handle high voltages and currents efficiently.

Manufacturer

The FGY75T120SQDN is a product manufactured by Fuji Electric, a Japanese company known for its expertise in electric and electronic equipment. Founded in 1923, Fuji Electric specializes in the development and production of a wide range of products, including power semiconductors, industrial automation systems, and renewable energy solutions. The company is recognized for its innovation in power electronics and plays a significant role in various industries, including energy, transportation, and manufacturing. Fuji Electric is committed to sustainability and aims to contribute to the advancement of society through its technologies.

Application

The FGY75T120SQDN is a high-power IGBT (Insulated Gate Bipolar Transistor) often used in applications such as industrial motor drives, renewable energy systems (like solar inverters), uninterruptible power supplies (UPS), and induction heating systems. Its high efficiency and robust performance make it suitable for power electronics in applications requiring high voltage and current handling capabilities.

Equivalent

The FGY75T120SQDN is an IGBT module. Equivalent products include the IXGH75N120, MITSUBISHI MG75J120, and the SEMIKRON SKM75GB128D. Always verify the specifications and ratings to ensure compatibility with your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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