FM24W256-G

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FM24W256-G

IC FRAM 256KBIT I2C 1MHZ 8SOIC

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Spezifikationen

Package Bulk,Tube
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 256Kb (32K x 8)
MemoryInterface I²C
ClockFrequency 1 MHz
AccessTime 550 ns
Voltage-Supply 2.7V ~ 5.5V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Übersicht

Description

The FM24W256-G is a 256 Kbit (32 Kbyte) ferroelectric random-access memory (FRAM) device developed by Fujitsu. It combines the benefits of non-volatile memory with the speed of SRAM, offering fast read and write cycles without the need for power to retain data. FRAM technology is characterized by its endurance, allowing for over 10 trillion read/write cycles, far exceeding traditional Flash memory.
The FM24W256-G operates on a voltage range of 2.7V to 3.6V and communicates through an I²C interface, making it compatible with various microcontrollers and systems. Its low power consumption and robustness against radiation make it suitable for applications in automotive, industrial, and consumer electronics.
Key features include fast write times (typically 20 ns), low power operation, and a wide temperature range, ensuring reliability in diverse environments. The FM24W256-G is ideal for applications requiring frequent data updates, such as data logging, configuration storage, and real-time data capture.

Features

The FM24W256-G is a 256-kbit (32K x 8) serial EEPROM with a wide range of features, including:
1. Interface: It uses a high-speed I2C interface, allowing for efficient communication with microcontrollers and other devices.
2. Voltage Range: Operates across a wide voltage range from 2.7V to 5.5V, making it suitable for a variety of applications.
3. Data Retention: Offers over 100 years of data retention, ensuring long-term storage reliability.
4. Endurance: Supports at least 1 million write/erase cycles, suitable for frequent data updates.
5. Operating Temperature: Typically rated for operation from -40°C to +85°C, suitable for industrial applications.
6. Page Write Capability: Allows for page write operations, enhancing write efficiency.
7. Low Power Consumption: Designed for low power operation, making it ideal for battery-powered devices.
8. Chip Enable Function: Provides a chip enable pin for easy control over multiple devices on the same bus.
These features make the FM24W256-G a versatile choice for embedded systems, data logging, and applications requiring non-volatile memory.

Package

The FM24W256-G is available in a SOIC-8 package type. This small outline integrated circuit (SOIC) package is commonly used for surface-mount applications, providing a compact footprint for the 256 Kbit ferroelectric RAM (FRAM) device.

Pinout

The FM24W256-G is a 256 Kbit (32 K x 8) Ferroelectric RAM (FRAM) memory device. It has a total of 8 pins. The pin functions are as follows:
1. VCC: Supply voltage (typically 2.7V to 3.6V).
2. GND: Ground reference.
3. SCK: Serial Clock input for SPI communication.
4. CS: Chip Select input to enable the device.
5. SI: Serial Input for data to be written to the memory.
6. SO: Serial Output for data read from the memory.
7. WP: Write Protect input (active high) to prevent data modification.
8. HOLD: Hold input to pause communication without losing data.
The FM24W256-G is designed for low power, fast write cycles, and high endurance, making it suitable for applications requiring reliable non-volatile memory.

Manufacturer

The FM24W256-G is manufactured by Fujitsu. Fujitsu is a global information and communication technology (ICT) company based in Japan, specializing in hardware, software, and IT services. The firm is known for its diverse range of products, including semiconductors, computing devices, and advanced technology solutions. Fujitsu operates in various sectors, providing innovative solutions for businesses and organizations worldwide, focusing on areas such as cloud computing, big data, AI, and IoT. The FM24W256-G specifically refers to a 256 Kbit Ferroelectric RAM (FeRAM) memory device, notable for its non-volatility and low power consumption, making it suitable for applications in automotive, industrial, and consumer electronics.

Application

The FM24W256-G is a 256Kb ferroelectric RAM (FeRAM) memory chip. Its application areas include industrial automation, automotive systems, medical devices, and consumer electronics, where non-volatile memory is required for data logging, configuration storage, and real-time data collection. Its fast write speeds, low power consumption, and high endurance make it suitable for applications needing frequent data updates without the wear associated with traditional flash memory.

Equivalent

Equivalent products to the FM24W256-G chip include the Microchip 24LC256, STMicroelectronics M24C256, and the NXP P24C256. These chips are all EEPROMs with similar specifications, such as 256Kb capacity and I2C interface. Always check datasheets for specific features and compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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