FM25V02A-G

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FM25V02A-G

IC FRAM 256KBIT SPI 40MHZ 8SOIC

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Spezifikationen

Package Tube
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 256Kb (32K x 8)
MemoryInterface SPI
ClockFrequency 40 MHz
Voltage-Supply 2V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Übersicht

Description

The FM25V02A-G is a 2-Mbit (256K x 8) non-volatile memory device based on Ferroelectric RAM (FeRAM) technology. It offers fast read and write cycles with high endurance, making it suitable for applications that require frequent data updates, such as in automotive, industrial, and consumer electronics.
Key features include:
- Non-volatile storage: Retains data without power.
- Fast access speed: Read speeds can reach up to 40 MHz, and write speeds are typically in the microsecond range.
- High endurance: Supports over 10 trillion read/write cycles, significantly more than traditional Flash memory.
- Low power consumption: Efficient operation, making it ideal for battery-powered devices.
The FM25V02A-G communicates via an SPI interface, ensuring easy integration with microcontrollers and other digital circuits. Its robust performance and reliability make it a preferred choice for applications requiring high-speed data logging and storage.

Features

The FM25V02A-G is a 2Mb (256K x 8) ferroelectric random access memory (FRAM) device. Key features include:
1. Non-Volatility: Retains data without power, similar to EEPROM, with unlimited read/write cycles.
2. Fast Access Time: Offers high-speed performance with access times as low as 45 ns.
3. Low Power Consumption: Consumes minimal power during read and write operations, making it suitable for battery-powered applications.
4. I2C Interface: Utilizes a standard I2C interface, supporting speeds of up to 1 MHz.
5. Wide Voltage Range: Operates over a voltage range of 2.7V to 3.6V, enhancing compatibility with various systems.
6. Temperature Range: Designed to function within a temperature range of -40°C to +85°C.
7. Byte Write Capability: Allows for writing data byte-by-byte, providing flexibility in data management.
These features make the FM25V02A-G ideal for applications requiring reliable data storage, such as industrial control, smart meters, and consumer electronics.

Package

The FM25V02A-G is available in a compact 8-pin SOIC (Small Outline Integrated Circuit) package, designed for surface mounting. It is commonly used for non-volatile memory applications.

Pinout

The FM25V02A-G is a 2-Mbit (256K x 8) serial EEPROM device with a pin count of 8. Its functions include:
1. VCC (Pin 1): Power supply pin, typically 2.7V to 3.6V.
2. GND (Pin 2): Ground reference.
3. SCK (Pin 3): Serial clock input for synchronizing data transmission.
4. SI (Pin 4): Serial input for data to be written to the EEPROM.
5. SO (Pin 5): Serial output for data read from the EEPROM.
6. CS (Pin 6): Chip select input to enable or disable the device.
7. HOLD (Pin 7): Hold pin to pause operations without resetting.
8. WP (Pin 8): Write protect pin to prevent write operations.
This device is designed for applications requiring non-volatile memory storage with a simple serial interface.

Manufacturer

The FM25V02A-G is manufactured by Fujitsu Semiconductor, a division of Fujitsu Limited. Fujitsu Semiconductor specializes in the design and production of semiconductor products, including memory devices, microcontrollers, and other integrated circuits. The company focuses on providing advanced technology solutions for various industries, including automotive, consumer electronics, and industrial applications. As part of Fujitsu Limited, a major Japanese multinational information technology equipment and services company, Fujitsu Semiconductor leverages its extensive research and development resources to deliver innovative semiconductor solutions.

Application

The FM25V02A-G is a non-volatile memory device used in various applications, including consumer electronics, automotive systems, industrial equipment, and telecommunications. It is ideal for storing configuration settings, firmware updates, and calibration data due to its fast read/write capabilities and endurance. Additionally, its low power consumption makes it suitable for battery-operated devices.

Equivalent

The FM25V02A-G is a 2-Mbit FRAM (Ferroelectric RAM) memory chip. Equivalent products include the following:
1. MB85RS2MT - Fujitsu
2. CY15B102Q - Cypress
3. M24512 - STMicroelectronics (for EEPROM as an alternative)
4. IS25W128 - ISSI (for SRAM alternative)
Ensure compatibility in terms of pin configuration, voltage, and timing specifications when considering substitutes.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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