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FQA11N90-F109
MOSFET N-CH 900V 11.4A TO3PN
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Spezifikationen
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | FQA11 |
Übersicht
Description
This MOSFET is used in various applications, such as in switching power supplies, motor controllers, and other electronic devices requiring efficient voltage regulation and switching. It is prized for its efficiency and reliability in high-power situations, making it suitable for both consumer and industrial applications. The FQA11N90-F109, with its robust design, provides high-speed switching and low on-resistance, which contributes to minimizing power loss.
Features
1. N-Channel MOSFET: It is an N-channel device, which typically has a higher electron mobility compared to P-channel MOSFETs, allowing for better performance in some applications.
2. Voltage Rating: It has a high voltage rating, usually around 900V, making it suitable for high-voltage applications.
3. Current Rating: The device can handle significant current, with a typical continuous drain current of about 11A, depending on the specific model specifications.
4. Low On-Resistance: It features low on-state resistance, minimizing power loss and heat generation during operation.
5. Fast Switching Speed: The MOSFET is designed for fast switching, improving efficiency in high-frequency applications.
6. TO-3P Package: It often comes in a TO-3P package, which provides good thermal performance and ease of mounting.
7. Applications: Suitable for use in power supplies, inverters, and other applications requiring efficient voltage regulation and power conversion.
These features make the FQA11N90-F109 ideal for demanding power electronics applications where efficiency and reliability are crucial.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This pin is the output of the MOSFET, where the main current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the return path for the drain current and is typically connected to the ground or the negative side of the supply voltage in most configurations.
The FQA11N90-F109 is a high-voltage, N-channel MOSFET designed for applications that require efficient power management and switching. It is capable of handling high currents and voltages, making it suitable for use in power supplies, inverters, and other high-power applications. Always refer to the device's datasheet for specific details and characteristics.
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