FQA11N90C

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FQA11N90C

MOSFET N-CH 900V 11A TO3P

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Spezifikationen

Series QFET®
Part Status Obsolete
Base Product Number FQA1
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package TO-3P-3, SC-65-3
Packaging Tube

Übersicht

Description

The FQA11N90C is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (Vds) of 900V, making it suitable for use in power electronics, such as switching power supplies, motor drives, and other high-voltage systems. With a low on-resistance (Rds(on)) of approximately 0.11 ohms, it offers efficient operation, minimizing power loss during conduction.
This MOSFET is packaged in a TO-220 format, which provides excellent thermal performance and ease of mounting on heatsinks. Its fast switching capabilities make it ideal for applications that require rapid turn-on and turn-off cycles.
Key specifications include a maximum continuous drain current (Id) of 11A and a maximum gate-source voltage (Vgs) of ±20V. The FQA11N90C is commonly used in designs where reliability and efficiency are crucial, such as in renewable energy systems and industrial power management. Proper thermal management and gate driving are essential for optimal performance in actual applications.

Features

The FQA11N90C is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 11A, allowing it to handle significant loads.
3. Low R_DS(on): It offers a low on-resistance of approximately 0.9 ohms, improving efficiency and reducing heat in power management applications.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for power supply circuits and switching applications.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature (T_J) of 150°C, suitable for demanding environments.
6. Package: Typically available in a TO-220 package, facilitating easy heat dissipation.
These attributes make the FQA11N90C suitable for applications in power supplies, inverters, and motor drivers.

Package

The FQA11N90C is packaged in a TO-220 type enclosure. This package is commonly used for power MOSFETs, providing good thermal performance and allowing for efficient heat dissipation.

Pinout

The FQA11N90C is a high-voltage N-channel MOSFET with a pin count of 3. The typical functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will turn the device on (allow current to flow) or off (stop current flow).

2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin connects to the ground or the negative side of the circuit and is where the current enters the MOSFET when it is on.
The FQA11N90C is designed for applications such as power switching and can handle high voltages up to 900V with a maximum continuous drain current of 11A.

Manufacturer

The FQA11N90C is manufactured by Fairchild Semiconductor, which is a global semiconductor company. Fairchild specializes in designing and manufacturing a wide range of electronic components, including power transistors, diodes, and integrated circuits. The company is known for its innovations in power management and analog technologies, serving diverse markets such as automotive, industrial, consumer electronics, and telecommunications. Fairchild Semiconductor has a long history in the industry, being one of the pioneering companies in the semiconductor space. In 2016, it was acquired by ON Semiconductor, further expanding its product offerings and market reach.

Application

The FQA11N90C is a power MOSFET primarily used in high-voltage applications. Common areas include switch-mode power supplies, DC-DC converters, motor drives, and other power management systems. It is suitable for use in automotive, industrial, and consumer electronics applications where efficient power switching and thermal performance are critical.

Equivalent

The FQA11N90C is a N-channel MOSFET. Equivalent products include the IRF840, STP11NK90Z, and MTP11N90E. Always verify specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility in your specific application.

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