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FQA11N90C
MOSFET N-CH 900V 11A TO3P
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Spezifikationen
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQA1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package | TO-3P-3, SC-65-3 |
| Packaging | Tube |
Übersicht
Description
This MOSFET is packaged in a TO-220 format, which provides excellent thermal performance and ease of mounting on heatsinks. Its fast switching capabilities make it ideal for applications that require rapid turn-on and turn-off cycles.
Key specifications include a maximum continuous drain current (Id) of 11A and a maximum gate-source voltage (Vgs) of ±20V. The FQA11N90C is commonly used in designs where reliability and efficiency are crucial, such as in renewable energy systems and industrial power management. Proper thermal management and gate driving are essential for optimal performance in actual applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 11A, allowing it to handle significant loads.
3. Low R_DS(on): It offers a low on-resistance of approximately 0.9 ohms, improving efficiency and reducing heat in power management applications.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for power supply circuits and switching applications.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature (T_J) of 150°C, suitable for demanding environments.
6. Package: Typically available in a TO-220 package, facilitating easy heat dissipation.
These attributes make the FQA11N90C suitable for applications in power supplies, inverters, and motor drivers.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will turn the device on (allow current to flow) or off (stop current flow).
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin connects to the ground or the negative side of the circuit and is where the current enters the MOSFET when it is on.
The FQA11N90C is designed for applications such as power switching and can handle high voltages up to 900V with a maximum continuous drain current of 11A.
Manufacturer
Application
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Zahlungen
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