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FQA140N10
MOSFET N-CH 100V 140A TO3PN
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- Fr. Teil #FQA140N10
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- Datenblatt FQA140N10 DataSheet
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Spezifikationen
| Supplier | Rochester Electronics, LLC,onsemi |
| Package | Bulk,Tube |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 140A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 10mOhm @ 70A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 285 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 7900 pF @ 25 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3PN |
Übersicht
Description
Key features include low on-resistance (Rds(on)), which minimizes power loss and heat generation during operation, ensuring efficiency. The device typically possesses fast switching characteristics, making it ideal for high-speed applications.
The FQA140N10 is usually packaged in a TO-220 or similar format, facilitating easy heat dissipation through heatsinking. Overall, it is favored in industrial and automotive applications where robust performance and reliability are essential.
For specific parameters and thermal characteristics, refer to the manufacturer's datasheet.
Features
1. Drain-Source Voltage (Vds): Rated at 100V, allowing it to operate in various high-voltage environments.
2. Continuous Drain Current (Id): Capable of handling up to 140A, making it suitable for high-current applications.
3. Rds(on): Low on-resistance of approximately 0.03 ohms, resulting in enhanced efficiency and reduced power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Typically ranges from 2V to 4V, providing ease of drive with standard logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating various mounting options and thermal management.
6. Fast Switching Speed: Suitable for applications requiring quick switching, such as power supplies and motor drives.
7. Thermal Resistance: Good thermal characteristics, allowing for reliable performance under high-temperature conditions.
These features make the FQA140N10 suitable for applications like power management, DC-DC converters, and inverter circuits.
Package
Pinout
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on and off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
4. Body (B): Typically connected to the source internally, it is used for parasitic diode conduction.
This MOSFET is designed for applications such as power switching and is rated for a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 140A. Its low on-resistance makes it suitable for efficient power management applications.
Manufacturer
Application
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Zahlungen
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