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FQB34P10TM
MOSFET P-CH 100V 33.5A D2PAK
- Hersteller
- Fr. Teil #FQB34P10TM
- Paket TO-263-3
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 33.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 16.75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2910 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 155W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Übersicht
Description
Key specifications often include voltage ratings, current ratings, and on-resistance values, which determine how well the MOSFET performs under load. The device is commonly utilized in applications that require reliable operation under varying temperature conditions and high-frequency switching.
To effectively work with FQB34P10TM, understanding its electrical characteristics, thermal management, and packaging is crucial, ensuring compatibility with other circuit components. For detailed specifications, designers should refer to the manufacturer's datasheet, which provides essential information on operational limits and application guidelines.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: 100V, suitable for high-voltage applications.
3. Current Rating: 34A, allowing for substantial power handling.
4. RDS(on): Low on-resistance (~0.040 Ohm), which helps in reducing conduction losses and improving efficiency.
5. Fast Switching Speed: Enables high-frequency operation, making it ideal for switching power supplies and converters.
6. Thermal Management: Features a TO-220 package for effective heat dissipation.
7. Gate Threshold Voltage: Suitable for logic-level driving, simplifying control circuitry.
Overall, the FQB34P10TM is optimized for performance in power management applications, including DC-DC converters, motor drivers, and inverters.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The main current-carrying terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative side of the power supply.
The additional two pins are typically associated with the package type (like a TO-220 or similar), which may include mounting features but do not have any electrical function. The FQB34P10TM is designed for use in applications requiring high efficiency and low on-resistance, making it suitable for power switching applications.
Manufacturer
Application
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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