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FQB50N06TM
MOSFET N-CH 60V 50A D2PAK
- Hersteller
- Fr. Teil #FQB50N06TM
- Paket D2PAK-3 , TO-263-2
- Datenblatt FQB50N06TM DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 22mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1540 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 120W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Übersicht
Description
This MOSFET has a low on-resistance (RDS(on)), which minimizes power losses during operation, contributing to overall energy efficiency. It also has fast switching capabilities, allowing for rapid turn-on and turn-off times, which is beneficial in applications requiring high-frequency operation.
The FQB50N06TM typically comes in a TO-220 package, providing good thermal performance and ease of heat dissipation. It is widely used in various electronic devices, including power supplies, industrial equipment, and automotive applications. Overall, the FQB50N06TM is a versatile component that combines high performance with reliability, making it a popular choice among engineers and designers in the field of power electronics.
Features
- Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, suitable for various power applications.
- Current Rating: The continuous drain current (I_D) is up to 50A, allowing for substantial load handling.
- Low On-Resistance: With an R_DS(on) of around 0.025Ω at 10V gate drive, it ensures minimal power loss during operation.
- Fast Switching Speed: The device offers rapid switching capabilities, which enhances performance in PWM and other fast-switching applications.
- Thermal Performance: It comes in a TO-220 package, providing efficient heat dissipation and reliability under high-load conditions.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2-4V, enabling compatibility with low-voltage drive circuits.
These features make the FQB50N06TM suitable for applications in power supplies, motor control, and other electronic devices requiring efficient switching and control.
Package
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load connects. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the circuit, allowing current to flow when the device is activated.
The FQB50N06TM is designed for high-efficiency power switching applications, such as in power supplies and motor drivers, with a maximum continuous drain current of 50A and a maximum drain-source voltage of 60V.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer that focuses on providing a comprehensive portfolio of energy-efficient solutions, including analog, logic, and power management devices. The company caters to multiple industries, emphasizing innovation and sustainability to help customers optimize their designs and reduce energy consumption.
Application
Equivalent
Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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