FQD11P06TM

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FQD11P06TM

MOSFET P-CH 60V 9.4A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 185mOhm @ 4.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 550 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 38W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Übersicht

Description

FQD11P06TM is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for various electronic applications. It is designed to handle high voltage and current, making it suitable for power management, switching applications, and as a control element in circuits.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) of up to 11A. The device often features low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation.
FQD11P06TM is commonly utilized in power supplies, motor drivers, and other applications requiring efficient handling of power. Its package type, often TO-220 or similar, allows for effective heat dissipation, which is crucial in high-power applications.
Understanding the datasheet is essential for proper application, ensuring that the component operates within specified limits to avoid damage and ensure reliability.

Features

The FQD11P06TM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 60V, making it suitable for a range of applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 11A, allowing it to manage significant loads.
3. Low On-Resistance: The R_DS(on) is low, around 0.065 Ohms at V_GS = 10V, which reduces power losses during operation.
4. Fast Switching Speed: It has a high-speed switching capability, making it ideal for applications in power supplies and converters.
5. Package Type: It is available in TO-220 packaging, facilitating easy heat dissipation and integration into electronic circuits.
These features make the FQD11P06TM suitable for use in automotive, industrial, and consumer electronics applications.

Package

The FQD11P06TM is typically packaged in a TO-220 package type, which is a common package for power MOSFETs, providing good thermal management and ease of mounting on heat sinks.

Pinout

The FQD11P06TM is a P-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Source (S): This pin is the terminal through which the current flows into the MOSFET. It is typically connected to a higher voltage supply.
3. Drain (D): This pin is where the current flows out of the MOSFET to the load.
The FQD11P06TM is designed for applications that require efficient switching and amplification, featuring a low R_DS(on) for reduced power loss. It is often used in power management, motor control, and other electronic applications.

Manufacturer

The FQD11P06TM is manufactured by Fairchild Semiconductor, a company that specializes in semiconductor solutions. Fairchild Semiconductor, founded in 1957, is known for its innovation in the semiconductor industry, particularly in the development of power management, analog, and discrete components. The company focuses on providing high-performance semiconductor products for various applications, including automotive, industrial, and consumer electronics. In 2016, Fairchild was acquired by ON Semiconductor, a global supplier of semiconductor-based solutions, further enhancing its capabilities and market reach.

Application

The FQD11P06TM is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor control circuits, and power supply circuits. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power conversion in consumer electronics, automotive applications, and renewable energy systems. Additionally, it is utilized in switching applications and as a general-purpose electronic switch.

Equivalent

The FQD11P06TM is a P-channel MOSFET. Equivalent products include:
1. IRF9540N
2. SI8239BDY
3. STP11P06
4. FQP11P06
5. PMV30UN
Always verify specifications like voltage, current rating, and package to ensure compatibility.

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