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FQD16N25CTM
MOSFET N-CH 250V 16A DPAK
- Hersteller
- Fr. Teil #FQD16N25CTM
- Paket TO-252-3,DPAK(2Leads+Tab),SC-63
- Datenblatt FQD16N25CTM DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 270mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 53.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1080 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Übersicht
Description
This MOSFET offers low on-resistance (R_DS(on)), ensuring minimal power loss during operation, which enhances overall circuit efficiency. The FQD16N25CTM is also characterized by a fast switching speed, enabling it to handle high-frequency applications effectively.
It comes in a TO-220 package, which facilitates easy heat dissipation and mounting on heatsinks. Additionally, the device is protected against thermal overload, making it reliable in demanding environments. Overall, the FQD16N25CTM is an ideal choice for designers seeking robust performance in power management circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of 16A, allowing for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.025Ω, which helps reduce power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 3V, enabling efficient driving with low gate voltages.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting on PCBs.
6. Fast Switching: Designed for high-speed switching applications, it minimizes transition losses.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor drives.
These features make the FQD16N25CTM ideal for various electronic applications requiring efficient power management.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and receives the current when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It serves as the reference point for the drain current.
The FQD16N25CTM is commonly used in power management applications due to its low on-resistance and high current handling capabilities.
Manufacturer
Application
Equivalent
1. IRF3205
2. STP16NF06
3. FQP16N25
4. IRF151N
5. BSS138
Always check specific datasheets for exact specifications and suitability for your application.
Versand
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Zahlungen
Payment Methods
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