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FQD3P50TM
MOSFET P-CH 500V 2.1A DPAK
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- Fr. Teil #FQD3P50TM
- Paket DPAK-3
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 2.1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.9Ohm @ 1.05A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 660 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Übersicht
Description
Applications for the FQD3P50TM include power management circuits, DC-DC converters, and various switching applications in electronic devices. Its fast switching speed makes it suitable for high-frequency applications, while its robust construction ensures reliability in demanding environments.
When using this MOSFET, designers should consider parameters such as gate threshold voltage, maximum power dissipation, and thermal resistance to ensure optimal performance within their specific circuit configurations. The FQD3P50TM is often encapsulated in a surface-mount package, facilitating compact designs and efficient thermal management in modern electronics.
Features
1. Voltage Rating: It has a maximum V_DS of -50V, making it suitable for high-voltage environments.
2. Current Rating: The device supports continuous drain current of up to -3A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance of around 0.5 ohms, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from -1 to -3V, enabling effective switching with lower gate drive levels.
5. Package: It is available in a TO-220 package, which facilitates heat dissipation and makes it easy to handle in various applications.
6. Applications: Commonly used in power supplies, motor drivers, and other circuits requiring reliable switching performance.
Overall, the FQD3P50TM is characterized by its robust specifications, making it a versatile choice for electronic design engineers.
Package
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate allows the device to turn on and conduct current.
2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the power supply. In a P-channel MOSFET, it typically connects to a higher voltage than the drain when the device is active.
The FQD3P50TM is commonly used in applications such as power management, switching circuits, and signal routing. It features low on-resistance and is suitable for high-speed switching.
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