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FQD4P40TM
POWER FIELD-EFFECT TRANSISTOR, 2
- Hersteller
- Fr. Teil #FQD4P40TM
- Paket TO-252-3,DPAK(2Leads+Tab),SC-63
- Datenblatt FQD4P40TM DataSheet
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Spezifikationen
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 400 V |
| Current-ContinuousDrain(Id)@25°C | 2.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.1Ohm @ 1.35A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 680 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252, (D-Pak) |
Übersicht
Description
The device is typically housed in a TO-220 package, which provides efficient heat dissipation, allowing it to operate effectively under high power conditions. Its fast switching capabilities help reduce energy losses, enhancing overall system efficiency. FQD4P40TM is often used in conjunction with microcontrollers and other control circuits for reliable operation in various electronic systems.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 40V, making it suitable for various applications.
2. Current Handling: The device can handle continuous drain currents, often around 30A, depending on the specific package and thermal management.
3. Low On-Resistance: It boasts a low Rds(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: The MOSFET is optimized for fast switching, beneficial in applications such as DC-DC converters and motor control.
5. Thermal Performance: The package design supports effective heat dissipation, allowing for reliable operation under high load conditions.
6. Gate Threshold Voltage: It has a relatively low gate threshold voltage, enabling easy driving with standard logic levels.
Overall, the FQD4P40TM is suitable for power management in automotive, industrial, and consumer electronics applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source turns the device on.
2. Source (S): This is the terminal where the current enters the MOSFET. For a P-channel device, it is connected to the higher voltage side of the circuit.
3. Drain (D): This pin is where the current exits the MOSFET. It is connected to the load.
The FQD4P40TM is commonly used in applications like power management, switching, and amplification due to its ability to handle significant voltage and current levels. It features a maximum continuous drain current of 4A and a maximum V_DS (drain-source voltage) rating of -40V.
Manufacturer
Application
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Zahlungen
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