FQD5N60CTM

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FQD5N60CTM

MOSFET N-CH 600V 2.8A DPAK

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Spezifikationen

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 2.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.5Ohm @ 1.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 670 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 49W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Übersicht

Description

The FQD5N60CTM is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a breakdown voltage of 600 volts and a continuous drain current rating of 5A, making it suitable for various power management tasks in industrial and consumer electronics.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, enhancing overall efficiency. The FQD5N60CTM is typically used in applications such as power supplies, motor drives, and inverters.
With its fast switching capabilities, it is ideal for high-frequency applications. The device is encapsulated in a TO-220 package, allowing for effective heat dissipation. Users should consider its thermal performance, gate threshold voltage, and switching characteristics when integrating it into circuits, ensuring it meets the specific demands of their application.

Features

The FQD5N60CTM is an N-channel MOSFET designed for high voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V.
2. Continuous Drain Current: It supports a continuous drain current (Id) of up to 5A at 25°C.
3. Low On-Resistance: The device offers a low Rds(on) value, typically around 0.8 ohms, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Optimized for fast switching applications, making it suitable for use in power supplies and inverters.
5. Thermal Resistance: Features a low junction-to-case thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a TO-220 package, providing ease of mounting and thermal performance.
These attributes make the FQD5N60CTM suitable for various applications, including motor drivers, power converters, and lighting controls.

Package

The FQD5N60CTM is packaged in a TO-220 form factor, which is a type of metal can package commonly used for high-power transistors. This package offers good thermal performance and facilitates easy mounting on heat sinks.

Pinout

The FQD5N60CTM is a N-channel MOSFET transistor with a total pin count of 3. The pins and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow from the drain to the source.

2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the return path for current. It is typically connected to the ground in most applications.
The FQD5N60CTM is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current rating of 5A. Its features include low on-resistance and fast switching capabilities, making it suitable for various power management applications.

Manufacturer

The FQD5N60CTM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was known for its expertise in power management and semiconductor solutions, specializing in discrete, analog, and power integrated circuits used in various applications, including consumer electronics, automotive, and industrial sectors. The company has a strong reputation for innovation and quality in the semiconductor industry, focusing on technologies that enhance energy efficiency and performance. The FQD5N60CTM is a power MOSFET, widely used in switching applications due to its high voltage and current capabilities.

Application

The FQD5N60CTM is a N-channel MOSFET primarily used in power electronics applications. Its typical application areas include switch-mode power supplies, DC-DC converters, motor drivers, and inverters. It is suitable for high-efficiency power management in consumer electronics, industrial equipment, and renewable energy systems due to its high voltage and current handling capabilities.

Equivalent

The FQD5N60CTM is a N-channel MOSFET with a voltage rating of 600V and a current rating of 5A. Equivalent products include IRFBC30, STP5NK60Z, and MTP5N60E. Check specific datasheets for exact parameter matching, as characteristics like Rds(on) and gate threshold voltage may vary slightly.

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