FQD6N40CTM

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FQD6N40CTM

MOSFET N-CH 400V 4.5A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1Ohm @ 2.25A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 625 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 48W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Übersicht

Description

The FQD6N40CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a voltage rating of 400V and a continuous drain current of 6A, making it suitable for use in power supplies, motor control, and lighting applications. The device is characterized by low on-resistance (RDS(on)), enabling reduced power loss and improved thermal performance.
The FQD6N40CTM typically comes in a TO-220 package, facilitating heat dissipation during operation. Its fast switching capabilities make it ideal for applications requiring rapid response times. Additionally, it has a high breakdown voltage, ensuring reliability in high-voltage environments.
Key parameters to consider include the threshold voltage, gate capacitance, and thermal resistance. Overall, the FQD6N40CTM is a reliable choice for designers seeking efficient and robust solutions in power electronic circuits.

Features

The FQD6N40CTM is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-to-source voltage (Vds) of 400V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current (Id) of 6A, allowing it to manage significant loads.
3. RDS(on): The on-resistance is typically low, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is in the range of 2-4V, enabling it to be driven effectively by low-voltage logic levels.
5. Package Type: Typically available in a TO-220 package, it offers good thermal management and ease of heat dissipation.
6. Applications: Primarily used in power supplies, motor drives, and other high-frequency switching applications.
Overall, the FQD6N40CTM is valued for its robustness, efficiency, and versatility in various electronic applications.

Package

The FQD6N40CTM is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The FQD6N40CTM is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET. It connects to the load or power source.
3. Source (S): This pin is the terminal through which current exits the MOSFET. It is typically connected to ground in switching applications.
The FQD6N40CTM is designed for high-voltage applications and can handle a maximum drain-source voltage (V_DS) of 400V and a continuous drain current (I_D) of 6A. It is commonly used in power supplies, motor drives, and other high-efficiency switching applications.

Manufacturer

The FQD6N40CTM is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor. Fairchild Semiconductor was known for its production of a wide range of semiconductor products, including power MOSFETs, diodes, and integrated circuits. The company focused on innovation in the field of power management and has served various markets, including automotive, industrial, and consumer electronics. ON Semiconductor continues to uphold this legacy, offering advanced semiconductor solutions and technologies to meet the demands of the modern electronics industry.

Application

The FQD6N40CTM is a N-channel MOSFET commonly used in various applications, including power supplies, motor drivers, and DC-DC converters. Its features make it suitable for high-efficiency switching applications in consumer electronics, industrial equipment, and renewable energy systems. The device is ideal for use in power management circuits, inverters, and as a switch in automotive and telecommunication applications.

Equivalent

The FQD6N40CTM is a N-channel MOSFET, commonly used in power applications. Equivalent products include:
1. IRF740
2. STP6NK60Z
3. MTP6N40E
4. FQP50N60
5. NTP6N40
Always verify specifications like Vds, Id, Rds(on), and package type for compatibility in your specific application.

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