FQD7N30TM

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FQD7N30TM

MOSFET N-CH 300V 5.5A DPAK

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Spezifikationen

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 300 V
Current-ContinuousDrain(Id)@25°C 5.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 700mOhm @ 2.75A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 610 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Übersicht

Description

FQD7N30TM is a high-voltage N-channel MOSFET (enhancement mode) used as a switching device in power electronics. It’s typically rated around 300 V drain–source voltage and about 7 A continuous current, suitable for offline power supplies, DC–DC converters, motor drivers, and inverters. Key characteristics often include rugged avalanche energy, fast switching, and moderate gate charge for driveability. The gate‑source rating is up to 20 V, with a threshold roughly in the 2–4 V range; full conduction usually requires a higher gate voltage (commonly 10 V). It is available in common power packages such as TO-220AB or surface-mount variants like D2PAK/DPAK. As with all power MOSFETs, thermal management is important, so proper heatsinking and layout are needed. For exact electrical specs, package options, and thermal data, consult the official datasheet.

Features

FQD7N30TM is an N-channel enhancement-mode power MOSFET. Key features:
- VDS: 300 V
- ID: ~7 A (continuous)
- RDS(on): roughly 0.8–1.3 Ω (typical about 1.0 Ω) at VGS = 10 V
- VGS(th): about 2–4 V
- Avalanche ruggedness for inductive loads
- Integrated body diode (reverse conduction path)
- Fast switching with moderate gate charge
- Packaging: through-hole TO-220 style (TAB/heat-sinking suitable)
Uses: high-voltage switching in power supplies, motor drives, and DC-DC converters.
Note: For exact electrical parameters (max/min values, temp effects, package specifics), please consult the official datasheet.

Package

The FQD7N30TM is supplied in a TO-220 (3-lead, through‑hole) package — the standard heatsink‑mount MOSFET package.

Pinout

Pin count: 3 (plus the metal tab/heatsink).
Pin functions (typical N‑channel power MOSFET pinout):
- Pin 1: Gate — control terminal (voltage input to turn the device on/off)
- Pin 2: Drain — main current input (also connected to the metal tab)
- Pin 3: Source — main current output/return
Device function: FQD7N30TM is an N‑channel, enhancement‑mode power MOSFET (300 V, designed for power switching and amplification in high‑voltage applications).

Manufacturer

Manufacturer: Fairchild Semiconductor (the FQD7N30TM is a Fairchild part). Fairchild was a U.S.-based semiconductor company that designed and manufactured discrete power devices (including power MOSFETs), analog and mixed‑signal ICs, and power‑management solutions. It was acquired by ON Semiconductor in 2016.

Application

FQD7N30TM is an N-channel enhancement-mode MOSFET (≈300V, ≈7A). Typical application areas:
- Offline switch-mode power supplies and AC/DC adapters
- High-voltage DC-DC converters
- Motor control and driver circuits (low to moderate current)
- Power factor correction and front-end power stages
- Battery chargers and solar/inverter power stages
- Uninterruptible power supplies (UPS) and general high-voltage switching circuits

Equivalent

Do you need exact-pin-compatible replacements (same package/pinout) or just same electrical ratings (VDS, ID, RDS(on)) and in which package (TO-220, DPAK, SMD)?

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