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H26M62002JPR
32GB eMMC 5.1 FBGA-96 Memory (ICs) RoHS
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- Fr. Teil #H26M62002JPR
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- Datenblatt H26M62002JPR DataSheet
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Spezifikationen
| Packaging | FBGA-96 |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V |
| Controller Stand-By Current | 120uA |
| Interface | eMMC 5.1 |
| Memory Size | 32GB |
| NAND Operating Voltage (VCCF) | 2.7V~3.6V |
| NAND Stand-By Current | 60uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 280MB/S |
| Writing Speed in Sequence | 90MB/S |
Übersicht
Description
The designation "H26M" refers to the general family of the memory chip, while "62002" indicates specific characteristics such as its architecture and manufacturing process. The "JPR" suffix often denotes packaging and speed grade.
H26M62002JPR is designed to provide high-speed data processing and efficient performance, aligning with the demands of modern computing applications. It utilizes advanced fabrication technologies to enhance reliability and power efficiency, making it suitable for high-performance and embedded systems.
Overall, this DRAM chip plays a crucial role in enabling devices to run smoothly by facilitating quick data access and storage.
Features
1. Memory Structure: It utilizes a NAND architecture, providing efficient storage density and performance.
2. Access Time: Offers fast read access times, typically around 25 ns, enabling quick data retrieval.
3. Data Management: Supports advanced error correction features, enhancing data reliability.
4. Endurance: Designed for high endurance, allowing a substantial number of program/erase cycles, typically up to 100,000.
5. Power Consumption: Low power operation modes help in energy conservation, making it suitable for battery-powered devices.
6. Interface: Compatible with standard NAND Flash interfaces, facilitating easy integration into various systems.
7. Temperature Range: Operates effectively across a wide temperature range, making it suitable for industrial applications.
These features make the H26M62002JPR suitable for applications in consumer electronics, automotive, and industrial sectors where reliable memory is essential.
Package
Pinout
The primary functions of the H26M62002JPR include:
- Data Storage: It is designed for high-density storage applications, suitable for consumer electronics, mobile devices, and industrial applications.
- Data Transfer: Supports reliable data transfer rates, with an interface compatible with various systems.
- Erase and Write Operations: Capable of performing multiple erase and write cycles, essential for efficient data management.
This NAND Flash is typically used in applications requiring reliable, high-capacity memory solutions.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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