HAT2266H-EL-E

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HAT2266H-EL-E

MOSFET N-CH 60V 30A LFPAK

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Spezifikationen

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 10 V
Power Dissipation (Max) 23W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK
Package / Case SC-100, SOT-669
Base Product Number HAT2266

Übersicht

Description

"HAT2266H-EL-E" likely refers to a course code at a higher education institution. While specific details about this course aren't available, course codes generally follow a pattern where the letters and numbers convey information about the subject, level, and sometimes the semester or format of the course. "HAT" could denote a specific department or subject area, such as Health Technology or a similar field. The numbers "2266" might indicate the course level, with higher numbers typically representing advanced courses. "H-EL-E" could signify a particular section, online format, or elective status of the course.
For a specific introduction, you would need to refer to the course syllabus or catalog provided by the institution offering it. These documents will detail the course objectives, topics covered, prerequisites, and any other relevant information. If you are enrolled or considering enrollment, consulting these resources or speaking with an academic advisor would be beneficial to gain a clearer understanding of what "HAT2266H-EL-E" entails.

Features

The HAT2266H-EL-E is a power MOSFET featuring advanced trench technology designed for high efficiency and fast switching applications. Key features include:
1. Low On-Resistance: Offers reduced on-state resistance, which minimizes power loss and increases efficiency.
2. Fast Switching Speed: Ensures quick response times ideal for high-frequency applications.
3. High Power Handling Capability: Supports significant power loads, making it suitable for power management applications.
4. Compact Package: Packaged in a small, efficient form factor, conserving space on circuit boards.
5. Enhanced Thermal Performance: Improved heat dissipation allows for higher performance and reliability.
6. Robust Design: Engineered to withstand harsh operating conditions, ensuring longevity and durability.
These features make the HAT2266H-EL-E a versatile choice for applications requiring efficient power regulation and management.

Package

The HAT2266H-EL-E is a MOSFET transistor typically packaged in a surface-mount type, likely to be a TO-252, also known as DPAK. This package is commonly used for power transistors and allows for efficient thermal management in compact electronic applications.

Pinout

The HAT2266H-EL-E is a dual N-channel MOSFET. It has an 8-pin configuration, which is typical for dual MOSFET packages. The pins are designed to facilitate easy integration into circuits, providing efficient switching capabilities for a variety of electronic applications. The key functions of the HAT2266H-EL-E include acting as a switch or amplifier in power management systems. With its dual N-channel structure, it can handle higher current loads and provide fast switching speeds, making it suitable for use in battery-powered devices, DC-DC converters, and other applications requiring efficient power regulation.

Manufacturer

The HAT2266H-EL-E is manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company known for its design and production of microcontrollers, system-on-chip (SoC) solutions, and a wide range of other semiconductor products. The company focuses on various sectors including automotive, industrial, home electronics, and information & communication technology. Renesas has a reputation for providing innovative solutions that enhance the efficiency and performance of electronic devices.

Application

The HAT2266H-EL-E is a dual N-channel MOSFET commonly used in applications requiring efficient power management and switching. Its typical application areas include DC-DC converters, power management systems, load switches, and motor drives. Its compact design and efficient performance make it suitable for use in consumer electronics, automotive systems, and portable devices, where space constraint and energy efficiency are critical.

Equivalent

The HAT2266H-EL-E is a dual N-channel MOSFET. Equivalent products may include similar dual N-channel MOSFETs from other manufacturers with comparable specifications such as voltage, current capacity, and package type. Examples include the IRF7343 from Infineon, the Si4936DY from Vishay, and the 2N7002DW from ON Semiconductor. Always verify specifications to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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