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HUF75339P3
MOSFET N-CH 55V 75A TO220-3
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- Fr. Teil #HUF75339P3
- Paket
- Datenblatt HUF75339P3 DataSheet
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Spezifikationen
| Series | UltraFET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
Übersicht
Description
Key specifications typically include a voltage rating of around 40V and a continuous drain current up to approximately 60A, depending on the thermal management and operating conditions. The HUF75339P3 is packaged in a TO-220 format, allowing for effective heat dissipation. Its high-speed switching capabilities make it suitable for applications requiring rapid on/off cycles.
This device is popular in industries like consumer electronics, automotive, and renewable energy systems, where efficient power conversion is critical. Always refer to the datasheet for detailed electrical characteristics, thermal performance, and recommended operating conditions to ensure optimal application suitability.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 60A, ensuring robust performance in high-current scenarios.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 10mΩ, which minimizes power loss and heat generation during operation.
4. High-Speed Switching: Designed for fast switching capabilities, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: Features a well-designed package that aids in effective heat dissipation.
6. Package Type: Usually available in TO-220 or similar packages, facilitating easy mounting and thermal management.
These features make the HUF75339P3 suitable for a wide range of electronic applications, ensuring efficiency and reliability.
Package
Pinout
1. Gate (G) - Controls the switch operation.
2. Drain (D) - Carries the load current.
3. Source (S) - Completes the circuit and provides a return path for current.
The specific pin configuration generally follows the standard package layout, where the gate pin activates the device, allowing current to flow between the drain and source. This MOSFET is used in various applications, such as power management and switching circuits, due to its efficiency and fast switching capabilities. Always refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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