HYG011N04LS1TA

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HYG011N04LS1TA

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Spezifikationen

Manufacturer HUAYI
Package TOLL
Operating Temperature -55℃~+175℃
Current - Continuous Drain(Id) 320A
Pd - Power Dissipation 250W
Drain to Source Voltage 40V
RDS(on) 1.3mΩ@4.5V,50A
Gate Threshold Voltage (Vgs(th)@Id) 1.8V
Type 1 N-channel
Gate Charge(Qg) 92nC@10V
Input Capacitance(Ciss@Vds) 5870pF
Reverse Transfer Capacitance (Crss@Vds) 63pF@25V

Übersicht

Description

HYG011N04LS1TA is a high-quality N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features low on-resistance and fast switching capabilities, making it suitable for various electronic devices, including power supplies, motor drives, and DC-DC converters. This device typically has a voltage rating of 40V and a current rating of approximately 11A, enabling efficient performance in demanding circuits.
Its structure enhances thermal performance, allowing for better heat dissipation and reliability under load. Additionally, the HYG011N04LS1TA is often packaged in a TO-220 or similar format, facilitating easy integration into electronic systems. The MOSFET is controlled by voltage applied to its gate terminal, providing high input impedance and thus requiring minimal power to operate, which is advantageous for battery-operated devices.
Overall, the HYG011N04LS1TA is a versatile component widely used in modern electronic designs that require efficient switching and power management.

Features

The HYG011N04LS1TA is a high-performance N-channel MOSFET designed for efficient switching applications. Key features include:
1. Low On-Resistance (RDS(on)): This ensures minimal power loss and heat generation during operation, enhancing overall efficiency.
2. High Voltage Rating: Typically supports voltages up to 40V, making it suitable for various power management applications.
3. Fast Switching Speed: Allows for rapid turn-on and turn-off, which is crucial in high-frequency applications.
4. High Current Capability: Designed to handle significant load currents, making it ideal for power supplies and motor control.
5. Thermal Performance: Features a TO-220 package that facilitates effective heat dissipation.
6. Robustness: Offers high reliability under challenging conditions, including high temperatures.
Overall, the HYG011N04LS1TA is well-suited for applications in DC-DC converters, power supplies, and other areas where efficient power management is critical.

Package

The HYG011N04LS1TA is packaged in a TO-220 format. This package type is commonly used for power electronic devices, providing efficient thermal management and ease of mounting.

Pinout

The HYG011N04LS1TA is a N-channel MOSFET from the HYG series, manufactured by a semiconductor company like Hynix. It typically comes in a TO-220 package, which has three main pins.
The pin count and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching; applying voltage here allows current to flow between the other two pins.
2. Drain (D): This pin is where the load is connected; the current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit.
The HYG011N04LS1TA is designed for high-efficiency applications, with a rating for high voltage and current handling, making it suitable for power management in various electronic devices. Always refer to the manufacturer’s datasheet for detailed specifications and pin configuration.

Manufacturer

The manufacturer of the HYG011N04LS1TA is Hyundai Electric & Energy Systems Co., Ltd. This company is part of the larger Hyundai Group, which is a South Korean conglomerate. Hyundai Electric specializes in the development and production of electrical equipment and systems, including power generation, transmission, and distribution products. They are known for their innovation in the fields of power electronics, transformers, and electric machinery. Hyundai Electric plays a significant role in the energy sector, focusing on renewable energy solutions and smart grid technologies.

Application

HYG011N04LS1TA is a high-performance N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high efficiency make it suitable for automotive, industrial, and consumer electronics applications, particularly in power conversion and control circuits.

Equivalent

The HYG011N04LS1TA is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS140. Check specifications such as voltage, current rating, package type, and RDS(on) to ensure compatibility. Always confirm with the manufacturer’s datasheets for precise equivalency.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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