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IAUC60N04S6N044
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- Fr. Teil #IAUC60N04S6N044
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- Datenblatt IAUC60N04S6N044 DataSheet
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Spezifikationen
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
Übersicht
Description
IGBTs like the IAUC60N04S6N044 are commonly used in various applications, including motor drives, inverters, and power supply systems, owing to their ability to handle high voltages and currents while maintaining low switching losses. This specific model may also feature enhanced thermal performance and reliability, making it suitable for industrial applications where performance consistency is crucial.
For detailed specifications, datasheets from the manufacturer should be consulted to understand electrical characteristics, thermal management guidelines, and optimal application scenarios.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 60A, which is beneficial for high-power circuits.
3. R_DS(on): The on-resistance is low (typically around 6.5 mΩ), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is low, allowing for easy drive with standard logic-level voltages.
5. Package Type: It is usually available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: Commonly used in DC-DC converters, motor drives, and power management systems due to its robustness and efficiency.
These features make the IAUC60N04S6N044 suitable for various demanding electronic applications.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching on and off (input signal).
2. Drain (D): Connects to the load; current flows out through this pin when the MOSFET is on.
3. Source (S): Ground or negative terminal; current flows into this pin when the MOSFET is on.
4. Gate Source (G-S): This may also be referred to in the datasheet as part of the gate connection but primarily pertains to driving the gate with respect to the source.
5. Body (B): Often internally connected to the source; typically referenced for internal diode characteristics.
This MOSFET is commonly used in power management and switching applications due to its high efficiency and low on-resistance. Make sure to refer to the specific datasheet for detailed electrical characteristics and any additional pin function information.
Manufacturer
Application
Equivalent
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