IDH04G65C6

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IDH04G65C6

SiC Schottky Diodes SIC DIODES

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Übersicht

Description

The IDH04G65C6 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 4A, making it suitable for use in power electronics such as switch-mode power supplies, motor drives, and other high-efficiency circuits.
Key characteristics include low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation, and a fast switching speed, ideal for applications requiring quick response times. The device is packaged in a TO-220 format, providing effective thermal management.
With its ability to handle high voltages and currents, the IDH04G65C6 is commonly utilized in automotive, industrial, and renewable energy systems, contributing to improved performance and reliability in power conversion tasks.

Features

The IDH04G65C6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage power applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 4A, with higher pulsed current capabilities.
3. R_DS(on): The on-resistance is low, around 0.65Ω at a gate-source voltage (V_GS) of 10V, which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for easier drive requirements.
5. Package: Available in TO-220 or similar packages, facilitating thermal management and ease of mounting.
6. Applications: Suitable for power supplies, motor drives, and other applications requiring efficient switching and high reliability.
Overall, the IDH04G65C6 is designed for efficiency and robustness in demanding electronic environments.

Package

The IDH04G65C6 is packaged in a TO-220 form factor. This package type is commonly used for power devices, providing good thermal performance and ease of mounting to heatsinks.

Pinout

The IDH04G65C6 is an N-channel MOSFET produced by Infineon Technologies, featuring a total of 6 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load current flows in the on-state.
3. Source (S): The terminal connected to the ground or negative voltage in the circuit.
The specific pinout and detailed functions can typically be found in the manufacturer's datasheet. This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage of 650V and a continuous drain current rating of 4A, making it suitable for power management and switching applications.

Manufacturer

The IDH04G65C6 is manufactured by Infineon Technologies AG, a multinational semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor and system solutions for automotive, industrial power control, and security applications. The company is recognized for its innovative technologies in power management, microcontrollers, and sensors, serving various sectors such as automotive, industrial, and communication. Infineon plays a significant role in advancing energy efficiency and enabling smart mobility.

Application

The IDH04G65C6 is a high-voltage, N-channel MOSFET primarily used in power electronics applications. Its main application areas include DC-DC converters, motor drives, power inverters, and switching power supplies. It is suitable for industrial, automotive, and renewable energy systems due to its high efficiency and fast switching capabilities.

Equivalent

The IDH04G65C6 is a 650V, 4A IGBT module. Equivalent products include the Infineon IGBT modules like the IGBT4 series (e.g., IGBT4-65R, IGBT4-100R) and the ON Semiconductor NGTB4 series. Additionally, the Mitsubishi MGF series may serve as alternatives. Always verify specifications and ratings before substitution.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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