IDW30G120C5B

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IDW30G120C5B

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Spezifikationen

Brand Infineon Technologies
Subcategory Diodes & Rectifiers
Product Type SiC Schottky Diodes
Packaging Tube
Technology SiC

Übersicht

Description

IDW30G120C5B is a silicon carbide (SiC) MOSFET designed for high-performance power electronics applications. It features a maximum blocking voltage of 1200V and a continuous drain current rating of 30A, making it suitable for use in high-efficiency converters, inverters, and power supplies. The device showcases low on-resistance, allowing for reduced conduction losses and improved thermal performance, which is ideal for automotive, industrial, and renewable energy applications.
With its fast switching capabilities, the IDW30G120C5B facilitates higher frequency operation, contributing to smaller and lighter designs. The package typically utilized is a TO-247, which aids in effective heat dissipation. Key characteristics include high reliability, robustness against thermal and electrical stress, and compatibility with standard gate drivers. Overall, the IDW30G120C5B is an excellent choice for engineers looking to enhance efficiency and performance in modern power electronic systems.

Features

The IDW30G120C5B is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for industrial applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: Rated for a maximum continuous current of 30A, providing substantial power handling capabilities.
3. Thermal Management: Designed with efficient thermal performance, it typically features a metal base for enhanced heat dissipation.
4. Switching Speed: Offers fast switching characteristics, which improve efficiency in power conversion and reduce switching losses.
5. Package Type: Comes in a compact, robust package that facilitates easy mounting and integration into power electronic systems.
6. Applications: Commonly used in motor drives, renewable energy systems (like inverters), and other power electronic applications.
The IDW30G120C5B combines reliability and efficiency, making it ideal for demanding industrial environments.

Package

The IDW30G120C5B is packaged in a DPAK (TO-252) type package. This package is designed for surface mount applications and features a compact size, making it suitable for high power density designs.

Pinout

The IDW30G120C5B is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 5. The primary function of this component is to act as a power switch in high-voltage and high-current applications, providing efficient control of electrical power. It is commonly used in various power electronics applications such as motor drives, inverters, and converters.
The pin functions are typically as follows:
1. Gate (G): Controls the device's switching operation.
2. Collector (C): Connected to the load, where the output current flows.
3. Emitter (E): The return path for the current flowing through the device.
4. Thermal Pad: For heat dissipation, ensuring the device operates within safe temperature limits.
5. Additional Terminal: Often used for monitoring or auxiliary functions.
These features make the IDW30G120C5B suitable for applications requiring effective power management and control.

Manufacturer

The IDW30G120C5B is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of products, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and communication applications. The company focuses on innovation and solutions that enhance energy efficiency and safety in various electronic systems.

Application

The IDW30G120C5B is a 1200V, 30A IGBT (Insulated Gate Bipolar Transistor) specifically designed for applications in power electronics. Common application areas include motor drives, industrial automation, renewable energy systems (such as solar inverters), and power supplies. Its high efficiency and fast switching capabilities make it suitable for converters and inverters used in electric vehicles and HVAC systems as well.

Equivalent

The IDW30G120C5B is an IGBT module commonly used in power electronics. Equivalent products include the Infineon IGBT series (e.g., FZ1200R33HE3), the Mitsubishi M57962L, and the ON Semiconductor NGTB30N120FL3. Always verify specifications such as voltage, current ratings, and thermal characteristics to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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