IKW50N65ES5

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IKW50N65ES5

IGBTs Trenchstop 5 IGBT

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Spezifikationen

Packaging Tube
Standard Pack Qty 240

Übersicht

Description

The IKW50N65ES5 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power electronics applications, particularly in industrial and automotive sectors. With a voltage rating of 650V and a continuous current rating of 50A, it is suitable for high-voltage switching applications.
Key features include low on-resistance (R_DS(on)), which minimizes conduction losses, and fast switching capabilities, enhancing efficiency in circuits such as power supplies, motor drives, and inverters. The device is housed in a TO-247 package, facilitating efficient thermal management due to its robust design.
Its advanced trench technology provides reliable performance in high-frequency applications, while the integrated gate charge (Q_g) characteristics enable easy driver compatibility. The IKW50N65ES5 is optimized for applications requiring high reliability and efficiency, making it a popular choice among engineers and designers in the power electronics field.

Features

The IKW50N65ES5 is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. Key features include:
1. Voltage Rating: 650V maximum collector-emitter voltage, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous collector current of up to 50A, ideal for power conversion and motor drive applications.
3. Low On-State Voltage: Offers low VCE(sat) to improve efficiency and reduce power losses during operation.
4. Fast Switching Speed: Provides rapid turn-on and turn-off characteristics, enhancing performance in high-frequency applications.
5. Thermal Stability: Designed to operate effectively in high-temperature environments, ensuring reliability.
6. Rugged Design: Enhanced robustness against electrical overstress and thermal runaway.
These features make the IKW50N65ES5 suitable for applications such as inverters, converters, and various industrial automation systems.

Package

The IKW50N65ES5 is typically packaged in a TO-247 package type. This package is designed for high-power applications, providing efficient heat dissipation and robust electrical performance.

Pinout

The IKW50N65ES5 is a 650V N-channel MOSFET manufactured by Infineon. It features a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.

2. Drain (D): This is the terminal through which the main current flows into the MOSFET. It connects to the load or the positive side of the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
4. Tab: The tab is typically connected to the source and can also serve as a thermal interface for heat dissipation.
This device is commonly used in high-voltage applications such as power supplies, inverters, and motor drives.

Manufacturer

The IKW50N65ES5 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. The company is recognized for its expertise in power semiconductors, including MOSFETs and IGBTs, which are essential for efficient energy management in various applications. Infineon serves diverse markets, including automotive, industrial, and consumer electronics, contributing to advancements in energy efficiency, connectivity, and automation.

Application

The IKW50N65ES5 is an N-channel MOSFET primarily used in applications such as power supplies, motor drives, and industrial automation. It is well-suited for switch-mode power supplies (SMPS), inverters, and converters due to its high efficiency and low on-resistance. Additionally, it can be utilized in automotive applications and renewable energy systems, such as solar inverters, where efficient power management is crucial.

Equivalent

The IKW50N65ES5 is an N-channel MOSFET from Infineon. Equivalent products include:
1. IRF320
2. STP65NF65
3. FQP50N65
4. BTA50N65
Always check specific datasheets for exact specifications, including on-resistance (Rds(on)), gate threshold voltage, and package type to ensure compatibility.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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