IPA083N10N5

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IPA083N10N5

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Spezifikationen

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Mounting Style Through Hole
Height 16.15 mm
Length 10.65 mm
Width 4.85 mm
Unit Weight 0.068784 oz
Package / Case TO-220FP-3

Übersicht

Description

IPA083N10N5 is a specific model of an integrated circuit, commonly used in power management applications. It belongs to the family of high-performance power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). This device features low on-resistance, high-speed switching capabilities, and is typically designed for applications in power supplies, DC-DC converters, and motor control systems.
Key specifications often include a rated voltage and current, threshold voltage, and gate charge characteristics, which influence its efficiency and thermal performance. The "N" in the part number usually indicates it's an N-channel MOSFET, suitable for high-side switches and low-side switches in various circuit configurations.
For detailed characteristics, such as maximum ratings and thermal performance, it's recommended to consult the manufacturer's datasheet. This provides essential information for engineers and designers to effectively integrate the component into their systems, ensuring reliable operation and optimal performance in a range of electronics applications.

Features

The IPA083N10N5 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 83A, providing robust performance in high-current applications.
3. R_DS(on): The device boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically between 2-4V, enabling easy drive with standard logic levels.
5. Package Type: Typically packaged in a TO-220 or similar configuration, allowing for effective heat dissipation.
6. Fast Switching: The device is optimized for fast switching speeds, making it suitable for high-frequency applications.
Overall, the IPA083N10N5 is ideal for efficient power switching and can be used in various electronic applications, including power supplies and motor drivers.

Package

The IPA083N10N5 is typically packaged in a TO-247 format. This package type is known for its high thermal performance and is commonly used for power semiconductor devices.

Pinout

The IPA083N10N5 is an N-channel MOSFET designed for high-performance applications. It features a pin count of 3. The primary pins and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is connected to the ground or negative voltage in the circuit. It serves as the return path for the current.
The IPA083N10N5 is known for its low R_DS(on) and fast switching capabilities, making it suitable for applications like power management and switching circuits.

Manufacturer

The IPA083N10N5 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on automotive, industrial, and communication technologies. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, and it plays a significant role in the development of energy-efficient solutions and smart technologies. Infineon serves various markets, including automotive, industrial automation, and consumer electronics, contributing to advancements in energy efficiency, connectivity, and safety.

Application

The IPA083N10N5 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and switch-mode power supplies. Its high efficiency and low on-resistance make it suitable for high-frequency switching applications in consumer electronics, automotive systems, and renewable energy systems. Additionally, it can be utilized in electric vehicles and industrial automation for efficient power control and conversion.

Equivalent

The IPA083N10N5 is a high-performance N-channel MOSFET. Equivalent products include the STP10NK80Z, IRF840, and FDP10N10. Always check the datasheet for specific parameters like voltage, current ratings, and package type to ensure compatibility for your application.

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