IPA50R280CE

The IPA50R280CE is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. With a voltage rating of 1,200 volts and a current rating of 50 amps, this device is suitable for various applications, including renewable energy systems, motor drives, and power supplies.
The CE in its designation indicates that it is part of the newer generation of IGBTs, offering improved switching performance and reduced losses, particularly in high-frequency applications. Its low gate drive requirements enhance overall efficiency, making it easier to integrate into existing circuits.
The IPA50R280CE features a high-speed switching capability, which helps to minimize power dissipation and thermal stress, leading to enhanced reliability and longevity. Designed for optimal thermal performance, it is often utilized in applications requiring robust thermal management due to its compact package and efficient heat dissipation characteristics. Overall, the IPA50R280CE is a versatile component in the field of power electronics, facilitating advancements in energy conversion and management technologies.

The IPA50R280CE is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) can reach up to 50A, allowing it to handle significant power.
3. Low On-Resistance: With an Rds(on) of around 0.28 ohms, it provides low conduction losses, enhancing efficiency.
4. High Speed: It offers fast switching capabilities, beneficial for applications like DC-DC converters and inverters.
5. Thermal Performance: The package design supports efficient heat dissipation, ensuring reliability under load.
6. Gate Charge: A low total gate charge (Qg) helps reduce switching losses, improving overall performance in high-frequency applications.
Overall, the IPA50R280CE is ideal for power management in various electronic systems, including industrial and automotive applications.

The IPA50R280CE is packaged in a TO-247 housing. This package type features a robust design suitable for high-power applications, providing effective thermal management and ease of mounting.

The IPA50R280CE is an N-channel MOSFET manufactured by Infineon Technologies. It features a pin count of 4. The functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET's switching state. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This pin connects to the load, allowing current to flow when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit and is where the current exits the MOSFET.
4. Tab (T): The tab serves as an additional cooling surface and is typically connected to the source.
The IPA50R280CE is designed for high voltage and high current applications, with a maximum drain-source voltage of 280V and a maximum continuous drain current of 50A, making it suitable for power switching applications.

The IPA50R280CE is manufactured by Infineon Technologies, a global semiconductor company headquartered in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various sectors such as automotive, industrial, and consumer electronics, focusing on energy efficiency and smart technologies. Infineon is known for its innovation and contribution to the development of advanced electronic components, playing a crucial role in enabling modern electronic applications and systems.

The IPA50R280CE is an N-channel MOSFET primarily used in power conversion applications, such as switch-mode power supplies (SMPS), DC-DC converters, and motor control. Its high voltage and current ratings make it suitable for automotive applications, renewable energy systems, and industrial automation. Additionally, it can be employed in inverters and other high-efficiency electronic circuits requiring efficient switching and thermal management.

The IPA50R280CE is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 500V and a current rating of 280A. Equivalent products include the Infineon IGBT series, such as the IPA50R280P6 or other similar high-voltage IGBTs from manufacturers like Mitsubishi, ON Semiconductor, or NXP. Check specific datasheets for exact comparisons on voltage, current ratings, and other characteristics.