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IPB014N06NATMA1
MOSFET N-CH 60V 34A/180A TO263-7
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Spezifikationen
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 143µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 30 V |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Base Product Number | IPB014 |
Übersicht
Description
These transistors are essential in enhancing efficiency and performance in electronic circuits, often found in consumer electronics, automotive systems, and industrial applications. It's crucial to consult the datasheet for IPB014N06NATMA1 for detailed specifications, including its voltage and current ratings, thermal characteristics, and package type, to ensure proper application and integration into circuits.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) of up to 14A, allowing for substantial load handling.
3. On-Resistance: Low R_DS(on) of approximately 4.3 mΩ at V_GS of 10V, improving efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: V_GS(th) between 1.5V to 2.5V, facilitating easy drive with low gate voltage levels.
5. Package Type: Available in a TO-220 package, providing efficient heat dissipation and ease of PCB mounting.
6. High-Speed Switching: Suitable for applications in switching power supplies, motor drives, and other power management systems.
Overall, the IPB014N06NATMA1 offers a combination of high performance, efficiency, and thermal management, making it ideal for various electronic applications.
Package
Pinout
### Pin Configuration:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the negative side of the power source.
4. Gate (G): (Second instance for dual gate variety, if applicable).
5. Drain (D): (Second instance for dual drain variety, if applicable).
6. Source (S): (Second instance for dual source variety, if applicable).
### Key Features:
- Low R_DS(on) for improved efficiency.
- High current carrying capability.
- Suitable for applications like DC-DC converters and motor drivers.
For specific applications and configurations, please refer to the manufacturer's datasheet for detailed electrical characteristics and performance parameters.
Manufacturer
Application
Equivalent
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