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IPB017N10N5ATMA1
MOSFET N-CH 100V 180A TO263-7
- Hersteller
- Fr. Teil #IPB017N10N5ATMA1
- Paket TO-263-7
- Datenblatt IPB017N10N5ATMA1 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 1.7mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 279µA |
| GateCharge(Qg)(Max)@Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 15600 pF @ 50 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-7 |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)) of approximately 17 mΩ, ensuring minimal power loss during operation. Its fast switching capabilities enhance overall system performance, making it ideal for use in applications such as DC-DC converters, motor drivers, and power inverters.
The MOSFET is typically housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on PCBs. The IPB017N10N5ATMA1 is often chosen for its reliability, thermal performance, and ability to handle substantial load currents, making it a popular choice among engineers in power electronics design.
Features
1. Voltage Rating: Maximum drain-source voltage (Vds) of 100V, suitable for high-voltage applications.
2. On-Resistance: Low on-resistance (Rds(on)) of approximately 17 mΩ, enabling efficient power conduction and reduced heat generation.
3. Current Handling: Continuous drain current (Id) capability of up to 17A, making it suitable for various power applications.
4. Gate Threshold Voltage (Vgs(th)): Typically around 2-4V, allowing for easy compatibility with low-voltage control signals.
5. Package Type: Available in an TO-220 package, which provides good thermal performance and ease of mounting.
6. Fast Switching: High-speed switching capabilities, ideal for applications such as DC-DC converters, motor drives, and power supplies.
7. Robustness: Built to withstand high thermal and electrical stresses, enhancing reliability in demanding environments.
This combination of features makes the IPB017N10N5ATMA1 an excellent choice for power management in various electronic devices.
Package
Pinout
The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. It carries the current from the source to the load when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for current flowing through the MOSFET.
In summary, the IPB017N10N5ATMA1 has a total of three pins (Gate, Drain, Source), serving distinct roles in switching and amplifying electronic signals.
Manufacturer
Application
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Zahlungen
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